NAND08GW3C2BN6E Micron Technology Inc. IC FLASH 8GBIT 48TSOP
Integraallülitused (IC-d)
Tootja number:
NAND08GW3C2BN6E
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 8GBIT 48TSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
25ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
8Gb (1G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
48-TFSOP (0.724", 18.40mm Width)
Pakendamine :
Tray
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
48-TSOP
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
25ns
Laos
25,115
Ühiku hind:
Võtke meiega ühendust Pakkumine
NAND08GW3C2BN6E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele NAND08GW3C2BN6E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc NAND08GW3C2BN6E. Parima hinna saamiseks saidil NAND08GW3C2BN6E võtke meiega ühendust.
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NAND08GW3C2BN6E Iseärasused
NAND08GW3C2BN6E is produced by Micron Technology Inc., belongs to Mälu.
NAND08GW3C2BN6E Toote üksikasjad
:
NAND08GW3C2BN6E – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
NAND08GW3C2BN6E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NAND08GW3C2BN6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NAND08GW3C2BN6E (PDF), hind NAND08GW3C2BN6E, Pinout NAND08GW3C2BN6E, manuaal NAND08GW3C2BN6E Ja NAND08GW3C2BN6E asenduslahendus.
NAND08GW3C2BN6E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NAND08GW3C2BN6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NAND08GW3C2BN6E (PDF), hind NAND08GW3C2BN6E, Pinout NAND08GW3C2BN6E, manuaal NAND08GW3C2BN6E Ja NAND08GW3C2BN6E asenduslahendus.
NAND08GW3C2BN6E FAQ
:
1. What is the maximum operating temperature for the NAND08GW3C2BN6E?
The maximum operating temperature for the NAND08GW3C2BN6E is 85°C.
2. What is the input voltage range for this NAND flash memory?
The input voltage range for the NAND08GW3C2BN6E is typically 2.7V to 3.6V.
3. Can you provide the typical read and program times for this NAND flash memory?
The typical read time for the NAND08GW3C2BN6E is 25 microseconds, and the typical program time is 2000 microseconds.
4. What is the capacity of the NAND08GW3C2BN6E?
The capacity of the NAND08GW3C2BN6E is 8 gigabits (1 gigabyte).
5. What interface standards does the NAND08GW3C2BN6E support?
The NAND08GW3C2BN6E supports the ONFI 3.2 and Toggle 2.0 interface standards.
6. What are the typical power consumption specifications for this NAND flash memory?
The typical power consumption for the NAND08GW3C2BN6E is 5mA for read operations and 20mA for program/erase operations.
7. Is the NAND08GW3C2BN6E designed for industrial or consumer applications?
The NAND08GW3C2BN6E is designed for industrial applications.
8. What is the data retention period for the NAND08GW3C2BN6E?
The data retention period for the NAND08GW3C2BN6E is 5 years.
9. Can you provide information on the package type and dimensions for this NAND flash memory?
The NAND08GW3C2BN6E is available in a 63-ball BGA package with dimensions of 9mm x 11mm.
10. Does the NAND08GW3C2BN6E have built-in error correction capabilities?
Yes, the NAND08GW3C2BN6E features built-in hardware ECC (Error Correction Code) functionality.
The maximum operating temperature for the NAND08GW3C2BN6E is 85°C.
2. What is the input voltage range for this NAND flash memory?
The input voltage range for the NAND08GW3C2BN6E is typically 2.7V to 3.6V.
3. Can you provide the typical read and program times for this NAND flash memory?
The typical read time for the NAND08GW3C2BN6E is 25 microseconds, and the typical program time is 2000 microseconds.
4. What is the capacity of the NAND08GW3C2BN6E?
The capacity of the NAND08GW3C2BN6E is 8 gigabits (1 gigabyte).
5. What interface standards does the NAND08GW3C2BN6E support?
The NAND08GW3C2BN6E supports the ONFI 3.2 and Toggle 2.0 interface standards.
6. What are the typical power consumption specifications for this NAND flash memory?
The typical power consumption for the NAND08GW3C2BN6E is 5mA for read operations and 20mA for program/erase operations.
7. Is the NAND08GW3C2BN6E designed for industrial or consumer applications?
The NAND08GW3C2BN6E is designed for industrial applications.
8. What is the data retention period for the NAND08GW3C2BN6E?
The data retention period for the NAND08GW3C2BN6E is 5 years.
9. Can you provide information on the package type and dimensions for this NAND flash memory?
The NAND08GW3C2BN6E is available in a 63-ball BGA package with dimensions of 9mm x 11mm.
10. Does the NAND08GW3C2BN6E have built-in error correction capabilities?
Yes, the NAND08GW3C2BN6E features built-in hardware ECC (Error Correction Code) functionality.
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