NAND04GR3B2DN6E Micron Technology Inc. IC FLASH 4GBIT 48TSOP
Integraallülitused (IC-d)
Tootja number:
NAND04GR3B2DN6E
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 4GBIT 48TSOP
RoHs olek:

Andmetabelid:
Juurdepääsu aeg :
25ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
4Gb (512M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Discontinued at Digi-Key
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
48-TFSOP (0.724", 18.40mm Width)
Pakendamine :
Tray
Pinge – toide :
1.7 V ~ 1.95 V
seeria :
-
Tarnija seadmepakett :
48-TSOP
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
25ns
Laos
49,519
Ühiku hind:
Võtke meiega ühendust Pakkumine
NAND04GR3B2DN6E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele NAND04GR3B2DN6E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc NAND04GR3B2DN6E. Parima hinna saamiseks saidil NAND04GR3B2DN6E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
NAND04GR3B2DN6E Iseärasused
NAND04GR3B2DN6E is produced by Micron Technology Inc., belongs to Mälu.
NAND04GR3B2DN6E Toote üksikasjad
:
NAND04GR3B2DN6E – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
NAND04GR3B2DN6E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NAND04GR3B2DN6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NAND04GR3B2DN6E (PDF), hind NAND04GR3B2DN6E, Pinout NAND04GR3B2DN6E, manuaal NAND04GR3B2DN6E Ja NAND04GR3B2DN6E asenduslahendus.
NAND04GR3B2DN6E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC NAND04GR3B2DN6E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis NAND04GR3B2DN6E (PDF), hind NAND04GR3B2DN6E, Pinout NAND04GR3B2DN6E, manuaal NAND04GR3B2DN6E Ja NAND04GR3B2DN6E asenduslahendus.
NAND04GR3B2DN6E FAQ
:
1. What is the maximum operating temperature for the NAND04GR3B2DN6E?
The maximum operating temperature for the NAND04GR3B2DN6E is 85°C.
2. What is the input voltage range for this NAND flash memory?
The input voltage range for the NAND04GR3B2DN6E is typically 2.7V to 3.6V.
3. Can you provide the typical read and program times for this NAND flash memory?
The typical read time for the NAND04GR3B2DN6E is 25μs, and the typical program time is 2000μs.
4. What is the capacity of the NAND04GR3B2DN6E?
The capacity of the NAND04GR3B2DN6E is 4 gigabits (Gb).
5. Does the NAND04GR3B2DN6E support a synchronous interface?
No, the NAND04GR3B2DN6E does not support a synchronous interface.
6. What is the erase time for the NAND04GR3B2DN6E?
The erase time for the NAND04GR3B2DN6E is typically 1500μs.
7. Can you provide the data retention period for this NAND flash memory?
The data retention period for the NAND04GR3B2DN6E is 10 years.
8. Is the NAND04GR3B2DN6E compatible with industrial temperature ranges?
Yes, the NAND04GR3B2DN6E is compatible with industrial temperature ranges from -40°C to 85°C.
9. What are the package dimensions for the NAND04GR3B2DN6E?
The package dimensions for the NAND04GR3B2DN6E are 14mm x 18mm, with a thickness of 1.2mm.
10. Can you provide the endurance specification for the NAND04GR3B2DN6E?
The endurance specification for the NAND04GR3B2DN6E is 3000 program/erase cycles.
The maximum operating temperature for the NAND04GR3B2DN6E is 85°C.
2. What is the input voltage range for this NAND flash memory?
The input voltage range for the NAND04GR3B2DN6E is typically 2.7V to 3.6V.
3. Can you provide the typical read and program times for this NAND flash memory?
The typical read time for the NAND04GR3B2DN6E is 25μs, and the typical program time is 2000μs.
4. What is the capacity of the NAND04GR3B2DN6E?
The capacity of the NAND04GR3B2DN6E is 4 gigabits (Gb).
5. Does the NAND04GR3B2DN6E support a synchronous interface?
No, the NAND04GR3B2DN6E does not support a synchronous interface.
6. What is the erase time for the NAND04GR3B2DN6E?
The erase time for the NAND04GR3B2DN6E is typically 1500μs.
7. Can you provide the data retention period for this NAND flash memory?
The data retention period for the NAND04GR3B2DN6E is 10 years.
8. Is the NAND04GR3B2DN6E compatible with industrial temperature ranges?
Yes, the NAND04GR3B2DN6E is compatible with industrial temperature ranges from -40°C to 85°C.
9. What are the package dimensions for the NAND04GR3B2DN6E?
The package dimensions for the NAND04GR3B2DN6E are 14mm x 18mm, with a thickness of 1.2mm.
10. Can you provide the endurance specification for the NAND04GR3B2DN6E?
The endurance specification for the NAND04GR3B2DN6E is 3000 program/erase cycles.
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