MT47H512M4THN-3:E TR Micron Technology Inc. IC SDRAM 2GBIT 333MHZ 63FBGA
Integraallülitused (IC-d)
Tootja number:
MT47H512M4THN-3:E TR
Tootja:
Tootekategooria:
Kirjeldus:
IC SDRAM 2GBIT 333MHZ 63FBGA
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
450ps
Kella sagedus :
333MHz
Mälu liides :
Parallel
Mälu suurus :
2Gb (512M x 4)
Mälu tüüp :
Volatile
Mälu vorming :
DRAM
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-FBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
1.7 V ~ 1.9 V
seeria :
-
Tarnija seadmepakett :
63-FBGA (9x11.5)
Tehnoloogia :
SDRAM - DDR2
Töötemperatuur :
0°C ~ 85°C (TC)
Tsükli aja kirjutamine – sõna, leht :
15ns
Laos
62,508
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT47H512M4THN-3:E TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT47H512M4THN-3:E TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT47H512M4THN-3:E TR. Parima hinna saamiseks saidil MT47H512M4THN-3:E TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT47H512M4THN-3:E TR Iseärasused
MT47H512M4THN-3:E TR is produced by Micron Technology Inc., belongs to Mälu.
MT47H512M4THN-3:E TR Toote üksikasjad
:
MT47H512M4THN-3:E TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT47H512M4THN-3:E TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT47H512M4THN-3:E TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT47H512M4THN-3:E TR (PDF), hind MT47H512M4THN-3:E TR, Pinout MT47H512M4THN-3:E TR, manuaal MT47H512M4THN-3:E TR Ja MT47H512M4THN-3:E TR asenduslahendus.
MT47H512M4THN-3:E TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT47H512M4THN-3:E TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT47H512M4THN-3:E TR (PDF), hind MT47H512M4THN-3:E TR, Pinout MT47H512M4THN-3:E TR, manuaal MT47H512M4THN-3:E TR Ja MT47H512M4THN-3:E TR asenduslahendus.
MT47H512M4THN-3:E TR FAQ
:
1. What is the maximum operating frequency of the MT47H512M4THN-3:E TR memory module?
The maximum operating frequency of the MT47H512M4THN-3:E TR memory module is 1066MHz.
2. What is the operating voltage range for this memory module?
The operating voltage range for the MT47H512M4THN-3:E TR memory module is 1.7V to 1.95V.
3. Can this memory module operate at elevated temperatures?
Yes, the MT47H512M4THN-3:E TR memory module is designed to operate at extended temperature ranges, making it suitable for various environmental conditions.
4. What is the typical power consumption of this memory module?
The typical power consumption of the MT47H512M4THN-3:E TR memory module is dependent on the operating frequency and voltage, with detailed specifications available in the datasheet.
5. Does this memory module support ECC (Error-Correcting Code) functionality?
Yes, the MT47H512M4THN-3:E TR memory module supports ECC functionality for error detection and correction.
6. What are the available package options for this memory module?
The MT47H512M4THN-3:E TR memory module is available in a variety of package options, including FBGA (Fine-pitch Ball Grid Array) and other configurations.
7. Is this memory module compatible with DDR3 memory interfaces?
Yes, the MT47H512M4THN-3:E TR memory module is designed to be compatible with DDR3 memory interfaces.
8. Can this memory module be used in industrial applications?
Yes, the MT47H512M4THN-3:E TR memory module is suitable for industrial applications due to its extended temperature range and reliability.
9. What is the maximum capacity of this memory module?
The MT47H512M4THN-3:E TR memory module has a maximum capacity of 4Gb (512MB).
10. Are there any specific PCB layout guidelines for integrating this memory module?
Yes, detailed PCB layout guidelines are provided in the datasheet to ensure proper integration and signal integrity for the MT47H512M4THN-3:E TR memory module.
The maximum operating frequency of the MT47H512M4THN-3:E TR memory module is 1066MHz.
2. What is the operating voltage range for this memory module?
The operating voltage range for the MT47H512M4THN-3:E TR memory module is 1.7V to 1.95V.
3. Can this memory module operate at elevated temperatures?
Yes, the MT47H512M4THN-3:E TR memory module is designed to operate at extended temperature ranges, making it suitable for various environmental conditions.
4. What is the typical power consumption of this memory module?
The typical power consumption of the MT47H512M4THN-3:E TR memory module is dependent on the operating frequency and voltage, with detailed specifications available in the datasheet.
5. Does this memory module support ECC (Error-Correcting Code) functionality?
Yes, the MT47H512M4THN-3:E TR memory module supports ECC functionality for error detection and correction.
6. What are the available package options for this memory module?
The MT47H512M4THN-3:E TR memory module is available in a variety of package options, including FBGA (Fine-pitch Ball Grid Array) and other configurations.
7. Is this memory module compatible with DDR3 memory interfaces?
Yes, the MT47H512M4THN-3:E TR memory module is designed to be compatible with DDR3 memory interfaces.
8. Can this memory module be used in industrial applications?
Yes, the MT47H512M4THN-3:E TR memory module is suitable for industrial applications due to its extended temperature range and reliability.
9. What is the maximum capacity of this memory module?
The MT47H512M4THN-3:E TR memory module has a maximum capacity of 4Gb (512MB).
10. Are there any specific PCB layout guidelines for integrating this memory module?
Yes, detailed PCB layout guidelines are provided in the datasheet to ensure proper integration and signal integrity for the MT47H512M4THN-3:E TR memory module.
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