MT47H256M8THN-25E:M TR Micron Technology Inc. IC SDRAM 2GBIT 400MHZ 63FBGA
Integraallülitused (IC-d)
Tootja number:
MT47H256M8THN-25E:M TR
Tootja:
Tootekategooria:
Kirjeldus:
IC SDRAM 2GBIT 400MHZ 63FBGA
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
400ps
Kella sagedus :
400MHz
Mälu liides :
Parallel
Mälu suurus :
2Gb (256M x 8)
Mälu tüüp :
Volatile
Mälu vorming :
DRAM
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-TFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
1.7 V ~ 1.9 V
seeria :
-
Tarnija seadmepakett :
63-FBGA (8x10)
Tehnoloogia :
SDRAM - DDR2
Töötemperatuur :
0°C ~ 85°C (TC)
Tsükli aja kirjutamine – sõna, leht :
15ns
Laos
47,047
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT47H256M8THN-25E:M TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT47H256M8THN-25E:M TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT47H256M8THN-25E:M TR. Parima hinna saamiseks saidil MT47H256M8THN-25E:M TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT47H256M8THN-25E:M TR Iseärasused
MT47H256M8THN-25E:M TR is produced by Micron Technology Inc., belongs to Mälu.
MT47H256M8THN-25E:M TR Toote üksikasjad
:
MT47H256M8THN-25E:M TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT47H256M8THN-25E:M TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT47H256M8THN-25E:M TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT47H256M8THN-25E:M TR (PDF), hind MT47H256M8THN-25E:M TR, Pinout MT47H256M8THN-25E:M TR, manuaal MT47H256M8THN-25E:M TR Ja MT47H256M8THN-25E:M TR asenduslahendus.
MT47H256M8THN-25E:M TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT47H256M8THN-25E:M TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT47H256M8THN-25E:M TR (PDF), hind MT47H256M8THN-25E:M TR, Pinout MT47H256M8THN-25E:M TR, manuaal MT47H256M8THN-25E:M TR Ja MT47H256M8THN-25E:M TR asenduslahendus.
MT47H256M8THN-25E:M TR FAQ
:
1. What is the maximum operating frequency of the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The maximum operating frequency of the MT47H256M8THN-25E:M TR DDR3 SDRAM is 800 MHz.
2. What is the maximum capacity supported by the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The MT47H256M8THN-25E:M TR DDR3 SDRAM supports a maximum capacity of 2GB per device.
3. What is the operating voltage range for the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The operating voltage range for the MT47H256M8THN-25E:M TR DDR3 SDRAM is 1.35V to 1.5V.
4. What are the operating temperature and storage temperature ranges for the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The operating temperature range for the MT47H256M8THN-25E:M TR DDR3 SDRAM is 0°C to 95°C, and the storage temperature range is -55°C to 100°C.
5. Does the MT47H256M8THN-25E:M TR DDR3 SDRAM support auto-refresh and self-refresh modes?
Yes, the MT47H256M8THN-25E:M TR DDR3 SDRAM supports both auto-refresh and self-refresh modes.
6. What is the burst length supported by the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The MT47H256M8THN-25E:M TR DDR3 SDRAM supports burst lengths of 4 and 8.
7. Can the MT47H256M8THN-25E:M TR DDR3 SDRAM operate at different CAS latency settings?
Yes, the MT47H256M8THN-25E:M TR DDR3 SDRAM can operate at different CAS latency settings, including CL=5, CL=6, CL=7, CL=8, and CL=9.
8. What is the refresh interval for the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The refresh interval for the MT47H256M8THN-25E:M TR DDR3 SDRAM is 64ms (8K cycles).
9. Is the MT47H256M8THN-25E:M TR DDR3 SDRAM RoHS compliant?
Yes, the MT47H256M8THN-25E:M TR DDR3 SDRAM is RoHS compliant.
10. What is the package type and pin configuration of the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The MT47H256M8THN-25E:M TR DDR3 SDRAM is available in a 96-ball FBGA package with a 0.78mm ball pitch. The pin configuration is as follows: 12 banks, 8K refresh, and x8 organization.
The maximum operating frequency of the MT47H256M8THN-25E:M TR DDR3 SDRAM is 800 MHz.
2. What is the maximum capacity supported by the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The MT47H256M8THN-25E:M TR DDR3 SDRAM supports a maximum capacity of 2GB per device.
3. What is the operating voltage range for the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The operating voltage range for the MT47H256M8THN-25E:M TR DDR3 SDRAM is 1.35V to 1.5V.
4. What are the operating temperature and storage temperature ranges for the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The operating temperature range for the MT47H256M8THN-25E:M TR DDR3 SDRAM is 0°C to 95°C, and the storage temperature range is -55°C to 100°C.
5. Does the MT47H256M8THN-25E:M TR DDR3 SDRAM support auto-refresh and self-refresh modes?
Yes, the MT47H256M8THN-25E:M TR DDR3 SDRAM supports both auto-refresh and self-refresh modes.
6. What is the burst length supported by the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The MT47H256M8THN-25E:M TR DDR3 SDRAM supports burst lengths of 4 and 8.
7. Can the MT47H256M8THN-25E:M TR DDR3 SDRAM operate at different CAS latency settings?
Yes, the MT47H256M8THN-25E:M TR DDR3 SDRAM can operate at different CAS latency settings, including CL=5, CL=6, CL=7, CL=8, and CL=9.
8. What is the refresh interval for the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The refresh interval for the MT47H256M8THN-25E:M TR DDR3 SDRAM is 64ms (8K cycles).
9. Is the MT47H256M8THN-25E:M TR DDR3 SDRAM RoHS compliant?
Yes, the MT47H256M8THN-25E:M TR DDR3 SDRAM is RoHS compliant.
10. What is the package type and pin configuration of the MT47H256M8THN-25E:M TR DDR3 SDRAM?
The MT47H256M8THN-25E:M TR DDR3 SDRAM is available in a 96-ball FBGA package with a 0.78mm ball pitch. The pin configuration is as follows: 12 banks, 8K refresh, and x8 organization.
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