MT40A1G8WE-083E AIT:B TR Micron Technology Inc. IC SDRAM 8GBIT 1.2GHZ 78BGA
Integraallülitused (IC-d)
Tootja number:
MT40A1G8WE-083E AIT:B TR
Tootja:
Tootekategooria:
Kirjeldus:
IC SDRAM 8GBIT 1.2GHZ 78BGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
MT40A1G8WE-083E AIT:B TR Andmetabelid(PDF)
Juurdepääsu aeg :
-
Kella sagedus :
1.2GHz
Mälu liides :
Parallel
Mälu suurus :
8Gb (1G x 8)
Mälu tüüp :
Volatile
Mälu vorming :
DRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
78-TFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
1.14 V ~ 1.26 V
seeria :
-
Tarnija seadmepakett :
78-FBGA (8x12)
Tehnoloogia :
SDRAM - DDR4
Töötemperatuur :
-40°C ~ 95°C (TC)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
56,494
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT40A1G8WE-083E AIT:B TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT40A1G8WE-083E AIT:B TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT40A1G8WE-083E AIT:B TR. Parima hinna saamiseks saidil MT40A1G8WE-083E AIT:B TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT40A1G8WE-083E AIT:B TR Iseärasused
MT40A1G8WE-083E AIT:B TR is produced by Micron Technology Inc., belongs to Mälu.
MT40A1G8WE-083E AIT:B TR Toote üksikasjad
:
MT40A1G8WE-083E AIT:B TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT40A1G8WE-083E AIT:B TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT40A1G8WE-083E AIT:B TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT40A1G8WE-083E AIT:B TR (PDF), hind MT40A1G8WE-083E AIT:B TR, Pinout MT40A1G8WE-083E AIT:B TR, manuaal MT40A1G8WE-083E AIT:B TR Ja MT40A1G8WE-083E AIT:B TR asenduslahendus.
MT40A1G8WE-083E AIT:B TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT40A1G8WE-083E AIT:B TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT40A1G8WE-083E AIT:B TR (PDF), hind MT40A1G8WE-083E AIT:B TR, Pinout MT40A1G8WE-083E AIT:B TR, manuaal MT40A1G8WE-083E AIT:B TR Ja MT40A1G8WE-083E AIT:B TR asenduslahendus.
MT40A1G8WE-083E AIT:B TR FAQ
:
1. What is the maximum operating frequency of the MT40A1G8WE-083E AIT:B TR?
The maximum operating frequency of the MT40A1G8WE-083E AIT:B TR is 166MHz.
2. What is the operating temperature range for this semiconductor?
The operating temperature range for the MT40A1G8WE-083E AIT:B TR is -40°C to 85°C.
3. Can you provide the typical input and output voltage levels for this semiconductor?
The typical input voltage level for the MT40A1G8WE-083E AIT:B TR is 1.7V, and the typical output voltage level is 1.8V.
4. What is the standby current consumption of the MT40A1G8WE-083E AIT:B TR?
The standby current consumption of the MT40A1G8WE-083E AIT:B TR is typically 1μA.
5. Does this semiconductor support partial array self-refresh (PASR) mode?
Yes, the MT40A1G8WE-083E AIT:B TR supports partial array self-refresh (PASR) mode.
6. What is the burst length supported by this semiconductor?
The burst length supported by the MT40A1G8WE-083E AIT:B TR is 8.
7. Can you provide the package dimensions for this semiconductor?
The package dimensions for the MT40A1G8WE-083E AIT:B TR are 78-ball FBGA (8mm x 6mm).
8. What is the typical clock cycle time for this semiconductor?
The typical clock cycle time for the MT40A1G8WE-083E AIT:B TR is 6ns.
9. Is there a data mask option available for this semiconductor?
Yes, the MT40A1G8WE-083E AIT:B TR provides a data mask option.
10. What is the maximum tRCD (RAS to CAS Delay) supported by this semiconductor?
The maximum tRCD supported by the MT40A1G8WE-083E AIT:B TR is 15ns.
The maximum operating frequency of the MT40A1G8WE-083E AIT:B TR is 166MHz.
2. What is the operating temperature range for this semiconductor?
The operating temperature range for the MT40A1G8WE-083E AIT:B TR is -40°C to 85°C.
3. Can you provide the typical input and output voltage levels for this semiconductor?
The typical input voltage level for the MT40A1G8WE-083E AIT:B TR is 1.7V, and the typical output voltage level is 1.8V.
4. What is the standby current consumption of the MT40A1G8WE-083E AIT:B TR?
The standby current consumption of the MT40A1G8WE-083E AIT:B TR is typically 1μA.
5. Does this semiconductor support partial array self-refresh (PASR) mode?
Yes, the MT40A1G8WE-083E AIT:B TR supports partial array self-refresh (PASR) mode.
6. What is the burst length supported by this semiconductor?
The burst length supported by the MT40A1G8WE-083E AIT:B TR is 8.
7. Can you provide the package dimensions for this semiconductor?
The package dimensions for the MT40A1G8WE-083E AIT:B TR are 78-ball FBGA (8mm x 6mm).
8. What is the typical clock cycle time for this semiconductor?
The typical clock cycle time for the MT40A1G8WE-083E AIT:B TR is 6ns.
9. Is there a data mask option available for this semiconductor?
Yes, the MT40A1G8WE-083E AIT:B TR provides a data mask option.
10. What is the maximum tRCD (RAS to CAS Delay) supported by this semiconductor?
The maximum tRCD supported by the MT40A1G8WE-083E AIT:B TR is 15ns.
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