MT40A1G8WE-075E:B Micron Technology Inc. DDR4 8G 1GX8 FBGA
Integraallülitused (IC-d)
Tootja number:
MT40A1G8WE-075E:B
Tootja:
Tootekategooria:
Kirjeldus:
DDR4 8G 1GX8 FBGA
RoHs olek:
Andmetabelid:
MT40A1G8WE-075E:B Andmetabelid(PDF)
Juurdepääsu aeg :
-
Kella sagedus :
1.33GHz
Mälu liides :
Parallel
Mälu suurus :
8Gb (1G x 8)
Mälu tüüp :
Volatile
Mälu vorming :
DRAM
Osa olek :
Active
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
-
Pinge – toide :
1.14 V ~ 1.26 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
SDRAM - DDR4
Töötemperatuur :
0°C ~ 95°C (TC)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
51,325
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT40A1G8WE-075E:B Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT40A1G8WE-075E:B konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT40A1G8WE-075E:B. Parima hinna saamiseks saidil MT40A1G8WE-075E:B võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT40A1G8WE-075E:B Iseärasused
MT40A1G8WE-075E:B is produced by Micron Technology Inc., belongs to Mälu.
MT40A1G8WE-075E:B Toote üksikasjad
:
MT40A1G8WE-075E:B – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT40A1G8WE-075E:B, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT40A1G8WE-075E:B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT40A1G8WE-075E:B (PDF), hind MT40A1G8WE-075E:B, Pinout MT40A1G8WE-075E:B, manuaal MT40A1G8WE-075E:B Ja MT40A1G8WE-075E:B asenduslahendus.
MT40A1G8WE-075E:B, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT40A1G8WE-075E:B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT40A1G8WE-075E:B (PDF), hind MT40A1G8WE-075E:B, Pinout MT40A1G8WE-075E:B, manuaal MT40A1G8WE-075E:B Ja MT40A1G8WE-075E:B asenduslahendus.
MT40A1G8WE-075E:B FAQ
:
1. What is the maximum operating frequency of the MT40A1G8WE-075E:B DDR4 SDRAM?
The maximum operating frequency of the MT40A1G8WE-075E:B DDR4 SDRAM is 1600 MHz.
2. What is the operating voltage range for the MT40A1G8WE-075E:B DDR4 SDRAM?
The operating voltage range for the MT40A1G8WE-075E:B DDR4 SDRAM is 1.2V ± 0.06V.
3. Can the MT40A1G8WE-075E:B DDR4 SDRAM operate at extended temperature ranges?
Yes, the MT40A1G8WE-075E:B DDR4 SDRAM can operate at extended temperature ranges from -40°C to 95°C.
4. What is the typical CAS latency of the MT40A1G8WE-075E:B DDR4 SDRAM?
The typical CAS latency of the MT40A1G8WE-075E:B DDR4 SDRAM is CL17.
5. Does the MT40A1G8WE-075E:B DDR4 SDRAM support on-die termination (ODT)?
Yes, the MT40A1G8WE-075E:B DDR4 SDRAM supports on-die termination (ODT) for improved signal integrity.
6. What is the burst length supported by the MT40A1G8WE-075E:B DDR4 SDRAM?
The MT40A1G8WE-075E:B DDR4 SDRAM supports burst lengths of 8 and 4.
7. Is the MT40A1G8WE-075E:B DDR4 SDRAM compatible with RoHS requirements?
Yes, the MT40A1G8WE-075E:B DDR4 SDRAM is compliant with RoHS (Restriction of Hazardous Substances) requirements.
8. What is the refresh rate of the MT40A1G8WE-075E:B DDR4 SDRAM?
The refresh rate of the MT40A1G8WE-075E:B DDR4 SDRAM is 8K (64ms).
9. Can the MT40A1G8WE-075E:B DDR4 SDRAM support ECC (Error-Correcting Code) functionality?
Yes, the MT40A1G8WE-075E:B DDR4 SDRAM can support ECC (Error-Correcting Code) functionality for data integrity.
10. What is the maximum capacity supported by the MT40A1G8WE-075E:B DDR4 SDRAM?
The MT40A1G8WE-075E:B DDR4 SDRAM supports a maximum capacity of 8Gb (1Gx8).
The maximum operating frequency of the MT40A1G8WE-075E:B DDR4 SDRAM is 1600 MHz.
2. What is the operating voltage range for the MT40A1G8WE-075E:B DDR4 SDRAM?
The operating voltage range for the MT40A1G8WE-075E:B DDR4 SDRAM is 1.2V ± 0.06V.
3. Can the MT40A1G8WE-075E:B DDR4 SDRAM operate at extended temperature ranges?
Yes, the MT40A1G8WE-075E:B DDR4 SDRAM can operate at extended temperature ranges from -40°C to 95°C.
4. What is the typical CAS latency of the MT40A1G8WE-075E:B DDR4 SDRAM?
The typical CAS latency of the MT40A1G8WE-075E:B DDR4 SDRAM is CL17.
5. Does the MT40A1G8WE-075E:B DDR4 SDRAM support on-die termination (ODT)?
Yes, the MT40A1G8WE-075E:B DDR4 SDRAM supports on-die termination (ODT) for improved signal integrity.
6. What is the burst length supported by the MT40A1G8WE-075E:B DDR4 SDRAM?
The MT40A1G8WE-075E:B DDR4 SDRAM supports burst lengths of 8 and 4.
7. Is the MT40A1G8WE-075E:B DDR4 SDRAM compatible with RoHS requirements?
Yes, the MT40A1G8WE-075E:B DDR4 SDRAM is compliant with RoHS (Restriction of Hazardous Substances) requirements.
8. What is the refresh rate of the MT40A1G8WE-075E:B DDR4 SDRAM?
The refresh rate of the MT40A1G8WE-075E:B DDR4 SDRAM is 8K (64ms).
9. Can the MT40A1G8WE-075E:B DDR4 SDRAM support ECC (Error-Correcting Code) functionality?
Yes, the MT40A1G8WE-075E:B DDR4 SDRAM can support ECC (Error-Correcting Code) functionality for data integrity.
10. What is the maximum capacity supported by the MT40A1G8WE-075E:B DDR4 SDRAM?
The MT40A1G8WE-075E:B DDR4 SDRAM supports a maximum capacity of 8Gb (1Gx8).
MT40A1G8WE-075E:B Seotud märksõnad
:
MT40A1G8WE-075E:B Hind
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