MT29F64G08CBCGBWP-B:G Micron Technology Inc. IC FLASH MLC 64GBIT 8GX8 TSOP
Integraallülitused (IC-d)
Tootja number:
MT29F64G08CBCGBWP-B:G
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH MLC 64GBIT 8GX8 TSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
64Gb (8G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
-
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
26,781
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F64G08CBCGBWP-B:G Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F64G08CBCGBWP-B:G konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F64G08CBCGBWP-B:G. Parima hinna saamiseks saidil MT29F64G08CBCGBWP-B:G võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F64G08CBCGBWP-B:G Iseärasused
MT29F64G08CBCGBWP-B:G is produced by Micron Technology Inc., belongs to Mälu.
MT29F64G08CBCGBWP-B:G Toote üksikasjad
:
MT29F64G08CBCGBWP-B:G – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F64G08CBCGBWP-B:G, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F64G08CBCGBWP-B:G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F64G08CBCGBWP-B:G (PDF), hind MT29F64G08CBCGBWP-B:G, Pinout MT29F64G08CBCGBWP-B:G, manuaal MT29F64G08CBCGBWP-B:G Ja MT29F64G08CBCGBWP-B:G asenduslahendus.
MT29F64G08CBCGBWP-B:G, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F64G08CBCGBWP-B:G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F64G08CBCGBWP-B:G (PDF), hind MT29F64G08CBCGBWP-B:G, Pinout MT29F64G08CBCGBWP-B:G, manuaal MT29F64G08CBCGBWP-B:G Ja MT29F64G08CBCGBWP-B:G asenduslahendus.
MT29F64G08CBCGBWP-B:G FAQ
:
1. What is the maximum capacity of the MT29F64G08CBCGBWP-B:G NAND flash memory?
The MT29F64G08CBCGBWP-B:G NAND flash memory has a maximum capacity of 64 gigabits.
2. What interface does the MT29F64G08CBCGBWP-B:G NAND flash memory use for data transfer?
The MT29F64G08CBCGBWP-B:G NAND flash memory uses a standard NAND interface for data transfer.
3. What is the operating voltage range of the MT29F64G08CBCGBWP-B:G NAND flash memory?
The operating voltage range of the MT29F64G08CBCGBWP-B:G NAND flash memory is typically between 2.7V and 3.6V.
4. Can the MT29F64G08CBCGBWP-B:G NAND flash memory be used in automotive applications?
Yes, the MT29F64G08CBCGBWP-B:G NAND flash memory is designed to meet the rigorous requirements of automotive applications.
5. What are the typical read and program times for the MT29F64G08CBCGBWP-B:G NAND flash memory?
The typical read time for the MT29F64G08CBCGBWP-B:G NAND flash memory is 25 microseconds, and the typical program time is 2000 microseconds.
6. Does the MT29F64G08CBCGBWP-B:G NAND flash memory support hardware data protection features?
Yes, the MT29F64G08CBCGBWP-B:G NAND flash memory supports hardware data protection features to ensure data integrity.
7. What is the temperature range for operation of the MT29F64G08CBCGBWP-B:G NAND flash memory?
The MT29F64G08CBCGBWP-B:G NAND flash memory is designed to operate within a temperature range of -40°C to 85°C.
8. Can the MT29F64G08CBCGBWP-B:G NAND flash memory be used in industrial control systems?
Yes, the MT29F64G08CBCGBWP-B:G NAND flash memory is suitable for use in industrial control systems due to its reliability and robustness.
9. What is the typical erase cycle endurance of the MT29F64G08CBCGBWP-B:G NAND flash memory?
The MT29F64G08CBCGBWP-B:G NAND flash memory typically has an erase cycle endurance of 100,000 cycles.
10. Does the MT29F64G08CBCGBWP-B:G NAND flash memory support advanced error correction techniques?
Yes, the MT29F64G08CBCGBWP-B:G NAND flash memory supports advanced error correction techniques to enhance data reliability.
The MT29F64G08CBCGBWP-B:G NAND flash memory has a maximum capacity of 64 gigabits.
2. What interface does the MT29F64G08CBCGBWP-B:G NAND flash memory use for data transfer?
The MT29F64G08CBCGBWP-B:G NAND flash memory uses a standard NAND interface for data transfer.
3. What is the operating voltage range of the MT29F64G08CBCGBWP-B:G NAND flash memory?
The operating voltage range of the MT29F64G08CBCGBWP-B:G NAND flash memory is typically between 2.7V and 3.6V.
4. Can the MT29F64G08CBCGBWP-B:G NAND flash memory be used in automotive applications?
Yes, the MT29F64G08CBCGBWP-B:G NAND flash memory is designed to meet the rigorous requirements of automotive applications.
5. What are the typical read and program times for the MT29F64G08CBCGBWP-B:G NAND flash memory?
The typical read time for the MT29F64G08CBCGBWP-B:G NAND flash memory is 25 microseconds, and the typical program time is 2000 microseconds.
6. Does the MT29F64G08CBCGBWP-B:G NAND flash memory support hardware data protection features?
Yes, the MT29F64G08CBCGBWP-B:G NAND flash memory supports hardware data protection features to ensure data integrity.
7. What is the temperature range for operation of the MT29F64G08CBCGBWP-B:G NAND flash memory?
The MT29F64G08CBCGBWP-B:G NAND flash memory is designed to operate within a temperature range of -40°C to 85°C.
8. Can the MT29F64G08CBCGBWP-B:G NAND flash memory be used in industrial control systems?
Yes, the MT29F64G08CBCGBWP-B:G NAND flash memory is suitable for use in industrial control systems due to its reliability and robustness.
9. What is the typical erase cycle endurance of the MT29F64G08CBCGBWP-B:G NAND flash memory?
The MT29F64G08CBCGBWP-B:G NAND flash memory typically has an erase cycle endurance of 100,000 cycles.
10. Does the MT29F64G08CBCGBWP-B:G NAND flash memory support advanced error correction techniques?
Yes, the MT29F64G08CBCGBWP-B:G NAND flash memory supports advanced error correction techniques to enhance data reliability.
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