MT29F4G16ABBEAH4:E Micron Technology Inc. IC FLASH 4GBIT 63VFBGA
Integraallülitused (IC-d)
Tootja number:
MT29F4G16ABBEAH4:E
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 4GBIT 63VFBGA
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
4Gb (256M x 16)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Bulk
Pinge – toide :
1.7 V ~ 1.95 V
seeria :
-
Tarnija seadmepakett :
63-VFBGA (9x11)
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
33,524
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F4G16ABBEAH4:E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F4G16ABBEAH4:E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F4G16ABBEAH4:E. Parima hinna saamiseks saidil MT29F4G16ABBEAH4:E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F4G16ABBEAH4:E Iseärasused
MT29F4G16ABBEAH4:E is produced by Micron Technology Inc., belongs to Mälu.
MT29F4G16ABBEAH4:E Toote üksikasjad
:
MT29F4G16ABBEAH4:E – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F4G16ABBEAH4:E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F4G16ABBEAH4:E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F4G16ABBEAH4:E (PDF), hind MT29F4G16ABBEAH4:E, Pinout MT29F4G16ABBEAH4:E, manuaal MT29F4G16ABBEAH4:E Ja MT29F4G16ABBEAH4:E asenduslahendus.
MT29F4G16ABBEAH4:E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F4G16ABBEAH4:E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F4G16ABBEAH4:E (PDF), hind MT29F4G16ABBEAH4:E, Pinout MT29F4G16ABBEAH4:E, manuaal MT29F4G16ABBEAH4:E Ja MT29F4G16ABBEAH4:E asenduslahendus.
MT29F4G16ABBEAH4:E FAQ
:
1. What is the maximum operating temperature for the MT29F4G16ABBEAH4:E NAND flash memory?
The maximum operating temperature for the MT29F4G16ABBEAH4:E NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F4G16ABBEAH4:E during read and program operations?
The typical power consumption of the MT29F4G16ABBEAH4:E during read operations is 50mA, and during program operations is 60mA.
3. Can the MT29F4G16ABBEAH4:E NAND flash memory be operated at voltages lower than the specified 3.3V?
No, the MT29F4G16ABBEAH4:E NAND flash memory should not be operated at voltages lower than the specified 3.3V to ensure proper functionality and reliability.
4. What are the available package options for the MT29F4G16ABBEAH4:E?
The MT29F4G16ABBEAH4:E is available in a 48-ball FBGA (8mm x 10mm) package.
5. Does the MT29F4G16ABBEAH4:E support hardware data protection features?
Yes, the MT29F4G16ABBEAH4:E supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What is the maximum clock frequency supported by the MT29F4G16ABBEAH4:E?
The maximum clock frequency supported by the MT29F4G16ABBEAH4:E is 50MHz.
7. Can the MT29F4G16ABBEAH4:E perform both random and sequential access operations efficiently?
Yes, the MT29F4G16ABBEAH4:E is designed to efficiently handle both random and sequential access operations.
8. What is the typical erase time for the MT29F4G16ABBEAH4:E NAND flash memory?
The typical erase time for the MT29F4G16ABBEAH4:E NAND flash memory is 2ms.
9. Is the MT29F4G16ABBEAH4:E compatible with standard NAND flash interfaces?
Yes, the MT29F4G16ABBEAH4:E is compatible with standard NAND flash interfaces, making it easy to integrate into various systems.
10. What is the expected data retention period for the MT29F4G16ABBEAH4:E under specified conditions?
The expected data retention period for the MT29F4G16ABBEAH4:E is 10 years under specified conditions.
The maximum operating temperature for the MT29F4G16ABBEAH4:E NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F4G16ABBEAH4:E during read and program operations?
The typical power consumption of the MT29F4G16ABBEAH4:E during read operations is 50mA, and during program operations is 60mA.
3. Can the MT29F4G16ABBEAH4:E NAND flash memory be operated at voltages lower than the specified 3.3V?
No, the MT29F4G16ABBEAH4:E NAND flash memory should not be operated at voltages lower than the specified 3.3V to ensure proper functionality and reliability.
4. What are the available package options for the MT29F4G16ABBEAH4:E?
The MT29F4G16ABBEAH4:E is available in a 48-ball FBGA (8mm x 10mm) package.
5. Does the MT29F4G16ABBEAH4:E support hardware data protection features?
Yes, the MT29F4G16ABBEAH4:E supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What is the maximum clock frequency supported by the MT29F4G16ABBEAH4:E?
The maximum clock frequency supported by the MT29F4G16ABBEAH4:E is 50MHz.
7. Can the MT29F4G16ABBEAH4:E perform both random and sequential access operations efficiently?
Yes, the MT29F4G16ABBEAH4:E is designed to efficiently handle both random and sequential access operations.
8. What is the typical erase time for the MT29F4G16ABBEAH4:E NAND flash memory?
The typical erase time for the MT29F4G16ABBEAH4:E NAND flash memory is 2ms.
9. Is the MT29F4G16ABBEAH4:E compatible with standard NAND flash interfaces?
Yes, the MT29F4G16ABBEAH4:E is compatible with standard NAND flash interfaces, making it easy to integrate into various systems.
10. What is the expected data retention period for the MT29F4G16ABBEAH4:E under specified conditions?
The expected data retention period for the MT29F4G16ABBEAH4:E is 10 years under specified conditions.
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:
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