MT29F3T08EUHBBM4-3R:B Micron Technology Inc. TLC 3T 384GX8 LBGA 8DP
Integraallülitused (IC-d)
Tootja number:
MT29F3T08EUHBBM4-3R:B
Tootja:
Tootekategooria:
Kirjeldus:
TLC 3T 384GX8 LBGA 8DP
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
333MHz
Mälu liides :
Parallel
Mälu suurus :
3Tb (384G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
-
Pinge – toide :
2.5 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
14,153
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F3T08EUHBBM4-3R:B Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F3T08EUHBBM4-3R:B konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F3T08EUHBBM4-3R:B. Parima hinna saamiseks saidil MT29F3T08EUHBBM4-3R:B võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F3T08EUHBBM4-3R:B Iseärasused
MT29F3T08EUHBBM4-3R:B is produced by Micron Technology Inc., belongs to Mälu.
MT29F3T08EUHBBM4-3R:B Toote üksikasjad
:
MT29F3T08EUHBBM4-3R:B – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F3T08EUHBBM4-3R:B, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F3T08EUHBBM4-3R:B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F3T08EUHBBM4-3R:B (PDF), hind MT29F3T08EUHBBM4-3R:B, Pinout MT29F3T08EUHBBM4-3R:B, manuaal MT29F3T08EUHBBM4-3R:B Ja MT29F3T08EUHBBM4-3R:B asenduslahendus.
MT29F3T08EUHBBM4-3R:B, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F3T08EUHBBM4-3R:B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F3T08EUHBBM4-3R:B (PDF), hind MT29F3T08EUHBBM4-3R:B, Pinout MT29F3T08EUHBBM4-3R:B, manuaal MT29F3T08EUHBBM4-3R:B Ja MT29F3T08EUHBBM4-3R:B asenduslahendus.
MT29F3T08EUHBBM4-3R:B FAQ
:
1. What is the maximum operating temperature for the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The maximum operating temperature for the MT29F3T08EUHBBM4-3R:B NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F3T08EUHBBM4-3R:B NAND flash memory during read operations?
The typical power consumption of the MT29F3T08EUHBBM4-3R:B NAND flash memory during read operations is 50mA.
3. Can the MT29F3T08EUHBBM4-3R:B NAND flash memory be operated at voltages lower than 3.3V?
No, the MT29F3T08EUHBBM4-3R:B NAND flash memory should not be operated at voltages lower than 3.3V.
4. What is the maximum clock frequency supported by the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The maximum clock frequency supported by the MT29F3T08EUHBBM4-3R:B NAND flash memory is 50MHz.
5. Does the MT29F3T08EUHBBM4-3R:B NAND flash memory support hardware data protection features?
Yes, the MT29F3T08EUHBBM4-3R:B NAND flash memory supports hardware data protection features.
6. What are the available package options for the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The MT29F3T08EUHBBM4-3R:B NAND flash memory is available in a 48-ball BGA package.
7. Is the MT29F3T08EUHBBM4-3R:B NAND flash memory compatible with industrial temperature ranges?
Yes, the MT29F3T08EUHBBM4-3R:B NAND flash memory is compatible with industrial temperature ranges.
8. What is the maximum program/erase cycle endurance of the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The MT29F3T08EUHBBM4-3R:B NAND flash memory has a maximum program/erase cycle endurance of 3000 cycles.
9. Can the MT29F3T08EUHBBM4-3R:B NAND flash memory operate in both synchronous and asynchronous modes?
Yes, the MT29F3T08EUHBBM4-3R:B NAND flash memory can operate in both synchronous and asynchronous modes.
10. What is the typical data retention period of the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The typical data retention period of the MT29F3T08EUHBBM4-3R:B NAND flash memory is 10 years.
The maximum operating temperature for the MT29F3T08EUHBBM4-3R:B NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F3T08EUHBBM4-3R:B NAND flash memory during read operations?
The typical power consumption of the MT29F3T08EUHBBM4-3R:B NAND flash memory during read operations is 50mA.
3. Can the MT29F3T08EUHBBM4-3R:B NAND flash memory be operated at voltages lower than 3.3V?
No, the MT29F3T08EUHBBM4-3R:B NAND flash memory should not be operated at voltages lower than 3.3V.
4. What is the maximum clock frequency supported by the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The maximum clock frequency supported by the MT29F3T08EUHBBM4-3R:B NAND flash memory is 50MHz.
5. Does the MT29F3T08EUHBBM4-3R:B NAND flash memory support hardware data protection features?
Yes, the MT29F3T08EUHBBM4-3R:B NAND flash memory supports hardware data protection features.
6. What are the available package options for the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The MT29F3T08EUHBBM4-3R:B NAND flash memory is available in a 48-ball BGA package.
7. Is the MT29F3T08EUHBBM4-3R:B NAND flash memory compatible with industrial temperature ranges?
Yes, the MT29F3T08EUHBBM4-3R:B NAND flash memory is compatible with industrial temperature ranges.
8. What is the maximum program/erase cycle endurance of the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The MT29F3T08EUHBBM4-3R:B NAND flash memory has a maximum program/erase cycle endurance of 3000 cycles.
9. Can the MT29F3T08EUHBBM4-3R:B NAND flash memory operate in both synchronous and asynchronous modes?
Yes, the MT29F3T08EUHBBM4-3R:B NAND flash memory can operate in both synchronous and asynchronous modes.
10. What is the typical data retention period of the MT29F3T08EUHBBM4-3R:B NAND flash memory?
The typical data retention period of the MT29F3T08EUHBBM4-3R:B NAND flash memory is 10 years.
MT29F3T08EUHBBM4-3R:B Seotud märksõnad
:
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