MT29F2G16ABBEAH4:E Micron Technology Inc. IC FLASH 2GBIT 63VFBGA
Integraallülitused (IC-d)
Tootja number:
MT29F2G16ABBEAH4:E
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 2GBIT 63VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
2Gb (128M x 16)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Bulk
Pinge – toide :
1.7 V ~ 1.95 V
seeria :
-
Tarnija seadmepakett :
63-VFBGA (9x11)
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
52,349
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F2G16ABBEAH4:E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F2G16ABBEAH4:E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F2G16ABBEAH4:E. Parima hinna saamiseks saidil MT29F2G16ABBEAH4:E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F2G16ABBEAH4:E Iseärasused
MT29F2G16ABBEAH4:E is produced by Micron Technology Inc., belongs to Mälu.
MT29F2G16ABBEAH4:E Toote üksikasjad
:
MT29F2G16ABBEAH4:E – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F2G16ABBEAH4:E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F2G16ABBEAH4:E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F2G16ABBEAH4:E (PDF), hind MT29F2G16ABBEAH4:E, Pinout MT29F2G16ABBEAH4:E, manuaal MT29F2G16ABBEAH4:E Ja MT29F2G16ABBEAH4:E asenduslahendus.
MT29F2G16ABBEAH4:E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F2G16ABBEAH4:E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F2G16ABBEAH4:E (PDF), hind MT29F2G16ABBEAH4:E, Pinout MT29F2G16ABBEAH4:E, manuaal MT29F2G16ABBEAH4:E Ja MT29F2G16ABBEAH4:E asenduslahendus.
MT29F2G16ABBEAH4:E FAQ
:
1. What is the maximum operating temperature for the MT29F2G16ABBEAH4:E NAND flash memory?
The maximum operating temperature for the MT29F2G16ABBEAH4:E NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F2G16ABBEAH4:E during read and program operations?
The typical power consumption of the MT29F2G16ABBEAH4:E during read operations is 50mA, and during program operations is 60mA.
3. Can the MT29F2G16ABBEAH4:E NAND flash memory be operated at voltages lower than the specified 3.3V?
No, the MT29F2G16ABBEAH4:E NAND flash memory should not be operated at voltages lower than the specified 3.3V to ensure proper functionality and reliability.
4. What is the maximum clock frequency supported by the MT29F2G16ABBEAH4:E NAND flash memory?
The maximum clock frequency supported by the MT29F2G16ABBEAH4:E NAND flash memory is 50MHz.
5. Does the MT29F2G16ABBEAH4:E support hardware data protection features?
Yes, the MT29F2G16ABBEAH4:E NAND flash memory supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the available package options for the MT29F2G16ABBEAH4:E NAND flash memory?
The MT29F2G16ABBEAH4:E NAND flash memory is available in a 48-ball FBGA (8mm x 10mm) package.
7. Is the MT29F2G16ABBEAH4:E NAND flash memory compatible with industrial temperature range applications?
Yes, the MT29F2G16ABBEAH4:E NAND flash memory is designed to operate reliably within the industrial temperature range of -40°C to 85°C.
8. Can the MT29F2G16ABBEAH4:E NAND flash memory be used in automotive electronics applications?
Yes, the MT29F2G16ABBEAH4:E NAND flash memory is suitable for use in automotive electronics applications, as it meets the necessary quality and reliability standards.
9. What is the typical data retention period for the MT29F2G16ABBEAH4:E NAND flash memory?
The typical data retention period for the MT29F2G16ABBEAH4:E NAND flash memory is 10 years.
10. Does the MT29F2G16ABBEAH4:E support advanced error correction mechanisms?
Yes, the MT29F2G16ABBEAH4:E NAND flash memory supports advanced error correction mechanisms to ensure data integrity and reliability.
The maximum operating temperature for the MT29F2G16ABBEAH4:E NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F2G16ABBEAH4:E during read and program operations?
The typical power consumption of the MT29F2G16ABBEAH4:E during read operations is 50mA, and during program operations is 60mA.
3. Can the MT29F2G16ABBEAH4:E NAND flash memory be operated at voltages lower than the specified 3.3V?
No, the MT29F2G16ABBEAH4:E NAND flash memory should not be operated at voltages lower than the specified 3.3V to ensure proper functionality and reliability.
4. What is the maximum clock frequency supported by the MT29F2G16ABBEAH4:E NAND flash memory?
The maximum clock frequency supported by the MT29F2G16ABBEAH4:E NAND flash memory is 50MHz.
5. Does the MT29F2G16ABBEAH4:E support hardware data protection features?
Yes, the MT29F2G16ABBEAH4:E NAND flash memory supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the available package options for the MT29F2G16ABBEAH4:E NAND flash memory?
The MT29F2G16ABBEAH4:E NAND flash memory is available in a 48-ball FBGA (8mm x 10mm) package.
7. Is the MT29F2G16ABBEAH4:E NAND flash memory compatible with industrial temperature range applications?
Yes, the MT29F2G16ABBEAH4:E NAND flash memory is designed to operate reliably within the industrial temperature range of -40°C to 85°C.
8. Can the MT29F2G16ABBEAH4:E NAND flash memory be used in automotive electronics applications?
Yes, the MT29F2G16ABBEAH4:E NAND flash memory is suitable for use in automotive electronics applications, as it meets the necessary quality and reliability standards.
9. What is the typical data retention period for the MT29F2G16ABBEAH4:E NAND flash memory?
The typical data retention period for the MT29F2G16ABBEAH4:E NAND flash memory is 10 years.
10. Does the MT29F2G16ABBEAH4:E support advanced error correction mechanisms?
Yes, the MT29F2G16ABBEAH4:E NAND flash memory supports advanced error correction mechanisms to ensure data integrity and reliability.
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:
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