MT29F2G08ABAEAWP-ATX:E Micron Technology Inc. IC FLASH 2GBIT 48TSOP
Integraallülitused (IC-d)
Tootja number:
MT29F2G08ABAEAWP-ATX:E
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 2GBIT 48TSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
2Gb (256M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
-
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
58,352
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F2G08ABAEAWP-ATX:E Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F2G08ABAEAWP-ATX:E konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F2G08ABAEAWP-ATX:E. Parima hinna saamiseks saidil MT29F2G08ABAEAWP-ATX:E võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F2G08ABAEAWP-ATX:E Iseärasused
MT29F2G08ABAEAWP-ATX:E is produced by Micron Technology Inc., belongs to Mälu.
MT29F2G08ABAEAWP-ATX:E Toote üksikasjad
:
MT29F2G08ABAEAWP-ATX:E – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F2G08ABAEAWP-ATX:E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F2G08ABAEAWP-ATX:E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F2G08ABAEAWP-ATX:E (PDF), hind MT29F2G08ABAEAWP-ATX:E, Pinout MT29F2G08ABAEAWP-ATX:E, manuaal MT29F2G08ABAEAWP-ATX:E Ja MT29F2G08ABAEAWP-ATX:E asenduslahendus.
MT29F2G08ABAEAWP-ATX:E, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F2G08ABAEAWP-ATX:E on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F2G08ABAEAWP-ATX:E (PDF), hind MT29F2G08ABAEAWP-ATX:E, Pinout MT29F2G08ABAEAWP-ATX:E, manuaal MT29F2G08ABAEAWP-ATX:E Ja MT29F2G08ABAEAWP-ATX:E asenduslahendus.
MT29F2G08ABAEAWP-ATX:E FAQ
:
1. What is the maximum capacity of the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The MT29F2G08ABAEAWP-ATX:E NAND flash memory has a maximum capacity of 2 gigabits.
2. What interface does the MT29F2G08ABAEAWP-ATX:E NAND flash memory use for data transfer?
The MT29F2G08ABAEAWP-ATX:E NAND flash memory uses a standard 8-bit or 16-bit multiplexed data bus for data transfer.
3. Can the MT29F2G08ABAEAWP-ATX:E NAND flash memory operate at industrial temperature ranges?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is designed to operate reliably within industrial temperature ranges.
4. What are the typical erase and program times for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The typical erase time for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 2 milliseconds, while the typical program time is 200 microseconds.
5. Does the MT29F2G08ABAEAWP-ATX:E NAND flash memory support hardware data protection features?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory supports hardware data protection features such as program/erase lockout and secure OTP (One-Time Programmable) area.
6. What is the voltage range for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The voltage range for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 2.7V to 3.6V for read and program operations, and 0V to 3.6V for erase operations.
7. Can the MT29F2G08ABAEAWP-ATX:E NAND flash memory be used in automotive applications?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is qualified for automotive applications and meets AEC-Q100 requirements.
8. What is the typical data retention period for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The typical data retention period for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 10 years.
9. Does the MT29F2G08ABAEAWP-ATX:E NAND flash memory support multiple block erase operations?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory supports multiple block erase operations, which can improve overall system performance.
10. Is the MT29F2G08ABAEAWP-ATX:E NAND flash memory compatible with standard NAND flash controllers?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is designed to be compatible with standard NAND flash controllers, providing ease of integration into existing systems.
The MT29F2G08ABAEAWP-ATX:E NAND flash memory has a maximum capacity of 2 gigabits.
2. What interface does the MT29F2G08ABAEAWP-ATX:E NAND flash memory use for data transfer?
The MT29F2G08ABAEAWP-ATX:E NAND flash memory uses a standard 8-bit or 16-bit multiplexed data bus for data transfer.
3. Can the MT29F2G08ABAEAWP-ATX:E NAND flash memory operate at industrial temperature ranges?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is designed to operate reliably within industrial temperature ranges.
4. What are the typical erase and program times for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The typical erase time for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 2 milliseconds, while the typical program time is 200 microseconds.
5. Does the MT29F2G08ABAEAWP-ATX:E NAND flash memory support hardware data protection features?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory supports hardware data protection features such as program/erase lockout and secure OTP (One-Time Programmable) area.
6. What is the voltage range for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The voltage range for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 2.7V to 3.6V for read and program operations, and 0V to 3.6V for erase operations.
7. Can the MT29F2G08ABAEAWP-ATX:E NAND flash memory be used in automotive applications?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is qualified for automotive applications and meets AEC-Q100 requirements.
8. What is the typical data retention period for the MT29F2G08ABAEAWP-ATX:E NAND flash memory?
The typical data retention period for the MT29F2G08ABAEAWP-ATX:E NAND flash memory is 10 years.
9. Does the MT29F2G08ABAEAWP-ATX:E NAND flash memory support multiple block erase operations?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory supports multiple block erase operations, which can improve overall system performance.
10. Is the MT29F2G08ABAEAWP-ATX:E NAND flash memory compatible with standard NAND flash controllers?
Yes, the MT29F2G08ABAEAWP-ATX:E NAND flash memory is designed to be compatible with standard NAND flash controllers, providing ease of integration into existing systems.
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