MT29F2G08ABAEAH4-ITX:E TR Micron Technology Inc. IC FLASH 2GBIT 63VFBGA
Integraallülitused (IC-d)
Tootja number:
MT29F2G08ABAEAH4-ITX:E TR
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 2GBIT 63VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
2Gb (256M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
63-VFBGA (9x11)
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
38,538
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F2G08ABAEAH4-ITX:E TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F2G08ABAEAH4-ITX:E TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F2G08ABAEAH4-ITX:E TR. Parima hinna saamiseks saidil MT29F2G08ABAEAH4-ITX:E TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F2G08ABAEAH4-ITX:E TR Iseärasused
MT29F2G08ABAEAH4-ITX:E TR is produced by Micron Technology Inc., belongs to Mälu.
MT29F2G08ABAEAH4-ITX:E TR Toote üksikasjad
:
MT29F2G08ABAEAH4-ITX:E TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F2G08ABAEAH4-ITX:E TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F2G08ABAEAH4-ITX:E TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F2G08ABAEAH4-ITX:E TR (PDF), hind MT29F2G08ABAEAH4-ITX:E TR, Pinout MT29F2G08ABAEAH4-ITX:E TR, manuaal MT29F2G08ABAEAH4-ITX:E TR Ja MT29F2G08ABAEAH4-ITX:E TR asenduslahendus.
MT29F2G08ABAEAH4-ITX:E TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F2G08ABAEAH4-ITX:E TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F2G08ABAEAH4-ITX:E TR (PDF), hind MT29F2G08ABAEAH4-ITX:E TR, Pinout MT29F2G08ABAEAH4-ITX:E TR, manuaal MT29F2G08ABAEAH4-ITX:E TR Ja MT29F2G08ABAEAH4-ITX:E TR asenduslahendus.
MT29F2G08ABAEAH4-ITX:E TR FAQ
:
1. What is the maximum operating temperature for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory?
The maximum operating temperature for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is 85°C.
2. What is the typical voltage supply range for this NAND flash memory?
The typical voltage supply range for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is 2.7V to 3.6V.
3. Can the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory be used in automotive applications?
Yes, the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is designed to meet the rigorous demands of automotive applications.
4. What is the maximum clock frequency supported by this NAND flash memory?
The maximum clock frequency supported by the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is 50MHz.
5. Does this NAND flash memory support hardware data protection features?
Yes, the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory supports hardware data protection features for enhanced security.
6. What is the typical program/erase cycle endurance for this NAND flash memory?
The typical program/erase cycle endurance for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is 3000 cycles.
7. Is the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory compatible with standard NAND interfaces?
Yes, this NAND flash memory is compatible with standard NAND interfaces, making it easy to integrate into existing designs.
8. What are the available package options for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory?
The MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is available in a 48-ball TFBGA package.
9. Can this NAND flash memory operate in both synchronous and asynchronous modes?
Yes, the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory can operate in both synchronous and asynchronous modes for flexibility in system design.
10. What is the typical data retention period for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory?
The typical data retention period for this NAND flash memory is 10 years.
The maximum operating temperature for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is 85°C.
2. What is the typical voltage supply range for this NAND flash memory?
The typical voltage supply range for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is 2.7V to 3.6V.
3. Can the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory be used in automotive applications?
Yes, the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is designed to meet the rigorous demands of automotive applications.
4. What is the maximum clock frequency supported by this NAND flash memory?
The maximum clock frequency supported by the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is 50MHz.
5. Does this NAND flash memory support hardware data protection features?
Yes, the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory supports hardware data protection features for enhanced security.
6. What is the typical program/erase cycle endurance for this NAND flash memory?
The typical program/erase cycle endurance for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is 3000 cycles.
7. Is the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory compatible with standard NAND interfaces?
Yes, this NAND flash memory is compatible with standard NAND interfaces, making it easy to integrate into existing designs.
8. What are the available package options for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory?
The MT29F2G08ABAEAH4-ITX:E TR NAND flash memory is available in a 48-ball TFBGA package.
9. Can this NAND flash memory operate in both synchronous and asynchronous modes?
Yes, the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory can operate in both synchronous and asynchronous modes for flexibility in system design.
10. What is the typical data retention period for the MT29F2G08ABAEAH4-ITX:E TR NAND flash memory?
The typical data retention period for this NAND flash memory is 10 years.
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