MT29F256G08EFEBBWP:B Micron Technology Inc. IC FLASH 256GBIT 48TSOP
Integraallülitused (IC-d)
Tootja number:
MT29F256G08EFEBBWP:B
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 256GBIT 48TSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
256Gb (32G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
-
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
26,228
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F256G08EFEBBWP:B Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F256G08EFEBBWP:B konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F256G08EFEBBWP:B. Parima hinna saamiseks saidil MT29F256G08EFEBBWP:B võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F256G08EFEBBWP:B Iseärasused
MT29F256G08EFEBBWP:B is produced by Micron Technology Inc., belongs to Mälu.
MT29F256G08EFEBBWP:B Toote üksikasjad
:
MT29F256G08EFEBBWP:B – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F256G08EFEBBWP:B, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F256G08EFEBBWP:B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F256G08EFEBBWP:B (PDF), hind MT29F256G08EFEBBWP:B, Pinout MT29F256G08EFEBBWP:B, manuaal MT29F256G08EFEBBWP:B Ja MT29F256G08EFEBBWP:B asenduslahendus.
MT29F256G08EFEBBWP:B, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F256G08EFEBBWP:B on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F256G08EFEBBWP:B (PDF), hind MT29F256G08EFEBBWP:B, Pinout MT29F256G08EFEBBWP:B, manuaal MT29F256G08EFEBBWP:B Ja MT29F256G08EFEBBWP:B asenduslahendus.
MT29F256G08EFEBBWP:B FAQ
:
1. What is the maximum operating temperature for MT29F256G08EFEBBWP:B?
The maximum operating temperature for MT29F256G08EFEBBWP:B is 85°C.
2. What is the typical power consumption of MT29F256G08EFEBBWP:B during read operations?
During read operations, MT29F256G08EFEBBWP:B typically consumes 200mA of power.
3. Can MT29F256G08EFEBBWP:B withstand electrostatic discharge (ESD)?
Yes, MT29F256G08EFEBBWP:B can withstand electrostatic discharge (ESD) up to 2000V.
4. What is the data retention period for MT29F256G08EFEBBWP:B?
MT29F256G08EFEBBWP:B has a data retention period of 10 years.
5. Does MT29F256G08EFEBBWP:B support hardware data protection features?
Yes, MT29F256G08EFEBBWP:B supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the recommended voltage levels for interfacing with MT29F256G08EFEBBWP:B?
The recommended voltage levels for interfacing with MT29F256G08EFEBBWP:B are 1.8V and 3.3V.
7. Is MT29F256G08EFEBBWP:B compatible with standard NAND flash interfaces?
Yes, MT29F256G08EFEBBWP:B is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface).
8. What is the typical erase time for MT29F256G08EFEBBWP:B?
The typical erase time for MT29F256G08EFEBBWP:B is 2ms.
9. Can MT29F256G08EFEBBWP:B operate in industrial temperature range?
Yes, MT29F256G08EFEBBWP:B can operate in the industrial temperature range of -40°C to 85°C.
10. Does MT29F256G08EFEBBWP:B support bad block management?
Yes, MT29F256G08EFEBBWP:B supports built-in bad block management for efficient memory utilization.
The maximum operating temperature for MT29F256G08EFEBBWP:B is 85°C.
2. What is the typical power consumption of MT29F256G08EFEBBWP:B during read operations?
During read operations, MT29F256G08EFEBBWP:B typically consumes 200mA of power.
3. Can MT29F256G08EFEBBWP:B withstand electrostatic discharge (ESD)?
Yes, MT29F256G08EFEBBWP:B can withstand electrostatic discharge (ESD) up to 2000V.
4. What is the data retention period for MT29F256G08EFEBBWP:B?
MT29F256G08EFEBBWP:B has a data retention period of 10 years.
5. Does MT29F256G08EFEBBWP:B support hardware data protection features?
Yes, MT29F256G08EFEBBWP:B supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the recommended voltage levels for interfacing with MT29F256G08EFEBBWP:B?
The recommended voltage levels for interfacing with MT29F256G08EFEBBWP:B are 1.8V and 3.3V.
7. Is MT29F256G08EFEBBWP:B compatible with standard NAND flash interfaces?
Yes, MT29F256G08EFEBBWP:B is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface).
8. What is the typical erase time for MT29F256G08EFEBBWP:B?
The typical erase time for MT29F256G08EFEBBWP:B is 2ms.
9. Can MT29F256G08EFEBBWP:B operate in industrial temperature range?
Yes, MT29F256G08EFEBBWP:B can operate in the industrial temperature range of -40°C to 85°C.
10. Does MT29F256G08EFEBBWP:B support bad block management?
Yes, MT29F256G08EFEBBWP:B supports built-in bad block management for efficient memory utilization.
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:
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