MT29F1G08ABBDAH4:D Micron Technology Inc. IC FLASH 1GBIT 25NS 63VFBGA
Integraallülitused (IC-d)
Tootja number:
MT29F1G08ABBDAH4:D
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 1GBIT 25NS 63VFBGA
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
1Gb (128M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Last Time Buy
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Bulk
Pinge – toide :
1.7 V ~ 1.95 V
seeria :
-
Tarnija seadmepakett :
63-VFBGA (9x11)
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
33,299
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F1G08ABBDAH4:D Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F1G08ABBDAH4:D konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F1G08ABBDAH4:D. Parima hinna saamiseks saidil MT29F1G08ABBDAH4:D võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F1G08ABBDAH4:D Iseärasused
MT29F1G08ABBDAH4:D is produced by Micron Technology Inc., belongs to Mälu.
MT29F1G08ABBDAH4:D Toote üksikasjad
:
MT29F1G08ABBDAH4:D – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F1G08ABBDAH4:D, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F1G08ABBDAH4:D on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F1G08ABBDAH4:D (PDF), hind MT29F1G08ABBDAH4:D, Pinout MT29F1G08ABBDAH4:D, manuaal MT29F1G08ABBDAH4:D Ja MT29F1G08ABBDAH4:D asenduslahendus.
MT29F1G08ABBDAH4:D, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F1G08ABBDAH4:D on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F1G08ABBDAH4:D (PDF), hind MT29F1G08ABBDAH4:D, Pinout MT29F1G08ABBDAH4:D, manuaal MT29F1G08ABBDAH4:D Ja MT29F1G08ABBDAH4:D asenduslahendus.
MT29F1G08ABBDAH4:D FAQ
:
1. What is the maximum operating temperature for the MT29F1G08ABBDAH4:D NAND flash memory?
The maximum operating temperature for the MT29F1G08ABBDAH4:D NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1G08ABBDAH4:D during read and program operations?
The typical power consumption of the MT29F1G08ABBDAH4:D during read operations is 25 mA, and during program operations is 30 mA.
3. Can the MT29F1G08ABBDAH4:D operate at a voltage below 3.3V?
No, the MT29F1G08ABBDAH4:D requires a minimum voltage of 3.3V for proper operation.
4. What is the maximum clock frequency supported by the MT29F1G08ABBDAH4:D?
The maximum clock frequency supported by the MT29F1G08ABBDAH4:D is 50 MHz.
5. Does the MT29F1G08ABBDAH4:D support hardware data protection features?
Yes, the MT29F1G08ABBDAH4:D supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the available package options for the MT29F1G08ABBDAH4:D?
The MT29F1G08ABBDAH4:D is available in a 48-ball TSOP, 63-ball BGA, and 100-ball BGA package options.
7. Can the MT29F1G08ABBDAH4:D perform simultaneous read and program operations?
No, the MT29F1G08ABBDAH4:D does not support simultaneous read and program operations.
8. What is the typical data retention period for the MT29F1G08ABBDAH4:D?
The typical data retention period for the MT29F1G08ABBDAH4:D is 10 years.
9. Is the MT29F1G08ABBDAH4:D compatible with standard NAND flash interfaces?
Yes, the MT29F1G08ABBDAH4:D is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface) 2.3.
10. What is the maximum erase cycle endurance of the MT29F1G08ABBDAH4:D?
The MT29F1G08ABBDAH4:D has a maximum erase cycle endurance of 100,000 cycles.
The maximum operating temperature for the MT29F1G08ABBDAH4:D NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1G08ABBDAH4:D during read and program operations?
The typical power consumption of the MT29F1G08ABBDAH4:D during read operations is 25 mA, and during program operations is 30 mA.
3. Can the MT29F1G08ABBDAH4:D operate at a voltage below 3.3V?
No, the MT29F1G08ABBDAH4:D requires a minimum voltage of 3.3V for proper operation.
4. What is the maximum clock frequency supported by the MT29F1G08ABBDAH4:D?
The maximum clock frequency supported by the MT29F1G08ABBDAH4:D is 50 MHz.
5. Does the MT29F1G08ABBDAH4:D support hardware data protection features?
Yes, the MT29F1G08ABBDAH4:D supports hardware data protection features such as block lock and OTP (One-Time Programmable) area.
6. What are the available package options for the MT29F1G08ABBDAH4:D?
The MT29F1G08ABBDAH4:D is available in a 48-ball TSOP, 63-ball BGA, and 100-ball BGA package options.
7. Can the MT29F1G08ABBDAH4:D perform simultaneous read and program operations?
No, the MT29F1G08ABBDAH4:D does not support simultaneous read and program operations.
8. What is the typical data retention period for the MT29F1G08ABBDAH4:D?
The typical data retention period for the MT29F1G08ABBDAH4:D is 10 years.
9. Is the MT29F1G08ABBDAH4:D compatible with standard NAND flash interfaces?
Yes, the MT29F1G08ABBDAH4:D is compatible with standard NAND flash interfaces such as ONFI (Open NAND Flash Interface) 2.3.
10. What is the maximum erase cycle endurance of the MT29F1G08ABBDAH4:D?
The MT29F1G08ABBDAH4:D has a maximum erase cycle endurance of 100,000 cycles.
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