MT29F1G08ABAEAWP:E TR Micron Technology Inc. IC FLASH 1GBIT 20NS 48TSOP
Integraallülitused (IC-d)
Tootja number:
MT29F1G08ABAEAWP:E TR
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 1GBIT 20NS 48TSOP
RoHs olek:

Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
1Gb (128M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
48-TFSOP (0.724", 18.40mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
48-TSOP
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
51,809
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F1G08ABAEAWP:E TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F1G08ABAEAWP:E TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F1G08ABAEAWP:E TR. Parima hinna saamiseks saidil MT29F1G08ABAEAWP:E TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F1G08ABAEAWP:E TR Iseärasused
MT29F1G08ABAEAWP:E TR is produced by Micron Technology Inc., belongs to Mälu.
MT29F1G08ABAEAWP:E TR Toote üksikasjad
:
MT29F1G08ABAEAWP:E TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F1G08ABAEAWP:E TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F1G08ABAEAWP:E TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F1G08ABAEAWP:E TR (PDF), hind MT29F1G08ABAEAWP:E TR, Pinout MT29F1G08ABAEAWP:E TR, manuaal MT29F1G08ABAEAWP:E TR Ja MT29F1G08ABAEAWP:E TR asenduslahendus.
MT29F1G08ABAEAWP:E TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F1G08ABAEAWP:E TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F1G08ABAEAWP:E TR (PDF), hind MT29F1G08ABAEAWP:E TR, Pinout MT29F1G08ABAEAWP:E TR, manuaal MT29F1G08ABAEAWP:E TR Ja MT29F1G08ABAEAWP:E TR asenduslahendus.
MT29F1G08ABAEAWP:E TR FAQ
:
1. What is the maximum operating temperature for the MT29F1G08ABAEAWP:E TR NAND flash memory?
The maximum operating temperature for the MT29F1G08ABAEAWP:E TR NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1G08ABAEAWP:E TR during read and program operations?
The typical power consumption during read operations is 25 mA, and during program operations, it is 30 mA.
3. Can the MT29F1G08ABAEAWP:E TR operate at a voltage below 3.3V?
No, the MT29F1G08ABAEAWP:E TR requires a minimum voltage of 3.3V for proper operation.
4. What is the maximum clock frequency supported by the MT29F1G08ABAEAWP:E TR?
The maximum clock frequency supported by the MT29F1G08ABAEAWP:E TR is 50 MHz.
5. Does the MT29F1G08ABAEAWP:E TR support hardware data protection features?
Yes, the MT29F1G08ABAEAWP:E TR supports hardware data protection features to ensure data integrity.
6. What are the available package options for the MT29F1G08ABAEAWP:E TR?
The MT29F1G08ABAEAWP:E TR is available in a 48-ball TSOP package.
7. Is the MT29F1G08ABAEAWP:E TR compatible with industrial temperature ranges?
Yes, the MT29F1G08ABAEAWP:E TR is designed to operate within industrial temperature ranges.
8. What is the typical erase time for the MT29F1G08ABAEAWP:E TR NAND flash memory?
The typical erase time for the MT29F1G08ABAEAWP:E TR NAND flash memory is 2ms.
9. Can the MT29F1G08ABAEAWP:E TR withstand shock and vibration in industrial environments?
Yes, the MT29F1G08ABAEAWP:E TR is designed to withstand shock and vibration in industrial environments.
10. Does the MT29F1G08ABAEAWP:E TR support automatic page read and cache read features?
Yes, the MT29F1G08ABAEAWP:E TR supports automatic page read and cache read features for improved performance.
The maximum operating temperature for the MT29F1G08ABAEAWP:E TR NAND flash memory is 85°C.
2. What is the typical power consumption of the MT29F1G08ABAEAWP:E TR during read and program operations?
The typical power consumption during read operations is 25 mA, and during program operations, it is 30 mA.
3. Can the MT29F1G08ABAEAWP:E TR operate at a voltage below 3.3V?
No, the MT29F1G08ABAEAWP:E TR requires a minimum voltage of 3.3V for proper operation.
4. What is the maximum clock frequency supported by the MT29F1G08ABAEAWP:E TR?
The maximum clock frequency supported by the MT29F1G08ABAEAWP:E TR is 50 MHz.
5. Does the MT29F1G08ABAEAWP:E TR support hardware data protection features?
Yes, the MT29F1G08ABAEAWP:E TR supports hardware data protection features to ensure data integrity.
6. What are the available package options for the MT29F1G08ABAEAWP:E TR?
The MT29F1G08ABAEAWP:E TR is available in a 48-ball TSOP package.
7. Is the MT29F1G08ABAEAWP:E TR compatible with industrial temperature ranges?
Yes, the MT29F1G08ABAEAWP:E TR is designed to operate within industrial temperature ranges.
8. What is the typical erase time for the MT29F1G08ABAEAWP:E TR NAND flash memory?
The typical erase time for the MT29F1G08ABAEAWP:E TR NAND flash memory is 2ms.
9. Can the MT29F1G08ABAEAWP:E TR withstand shock and vibration in industrial environments?
Yes, the MT29F1G08ABAEAWP:E TR is designed to withstand shock and vibration in industrial environments.
10. Does the MT29F1G08ABAEAWP:E TR support automatic page read and cache read features?
Yes, the MT29F1G08ABAEAWP:E TR supports automatic page read and cache read features for improved performance.
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:
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