MT29F1G08ABAEAH4-AATX:E TR Micron Technology Inc. IC FLASH 1GBIT 20NS 63VFBGA
Integraallülitused (IC-d)
Tootja number:
MT29F1G08ABAEAH4-AATX:E TR
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 1GBIT 20NS 63VFBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
1Gb (128M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 105°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
51,527
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F1G08ABAEAH4-AATX:E TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F1G08ABAEAH4-AATX:E TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F1G08ABAEAH4-AATX:E TR. Parima hinna saamiseks saidil MT29F1G08ABAEAH4-AATX:E TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F1G08ABAEAH4-AATX:E TR Iseärasused
MT29F1G08ABAEAH4-AATX:E TR is produced by Micron Technology Inc., belongs to Mälu.
MT29F1G08ABAEAH4-AATX:E TR Toote üksikasjad
:
MT29F1G08ABAEAH4-AATX:E TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F1G08ABAEAH4-AATX:E TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F1G08ABAEAH4-AATX:E TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F1G08ABAEAH4-AATX:E TR (PDF), hind MT29F1G08ABAEAH4-AATX:E TR, Pinout MT29F1G08ABAEAH4-AATX:E TR, manuaal MT29F1G08ABAEAH4-AATX:E TR Ja MT29F1G08ABAEAH4-AATX:E TR asenduslahendus.
MT29F1G08ABAEAH4-AATX:E TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F1G08ABAEAH4-AATX:E TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F1G08ABAEAH4-AATX:E TR (PDF), hind MT29F1G08ABAEAH4-AATX:E TR, Pinout MT29F1G08ABAEAH4-AATX:E TR, manuaal MT29F1G08ABAEAH4-AATX:E TR Ja MT29F1G08ABAEAH4-AATX:E TR asenduslahendus.
MT29F1G08ABAEAH4-AATX:E TR FAQ
:
1. What is the maximum operating temperature for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The maximum operating temperature for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is 85°C.
2. What is the typical voltage supply range for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The typical voltage supply range for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is 2.7V to 3.6V.
3. Can the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory be used in automotive applications?
Yes, the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is designed for automotive applications and meets the necessary requirements.
4. What is the maximum program/erase cycle endurance of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The maximum program/erase cycle endurance of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is 3000 cycles.
5. Does the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory support a wide range of interfaces?
Yes, the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory supports a wide range of interfaces including ONFI 2.3, Toggle 1.0, and asynchronous.
6. What is the typical power consumption of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory during read operations?
The typical power consumption of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory during read operations is 25mA.
7. Is the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory compatible with industrial temperature ranges?
Yes, the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is compatible with industrial temperature ranges from -40°C to 85°C.
8. What are the available package options for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is available in a 48-ball TFBGA package.
9. Can the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory be operated in a low-power mode?
Yes, the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory can be operated in a low-power mode to conserve energy.
10. What is the data retention period of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The data retention period of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is 10 years.
The maximum operating temperature for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is 85°C.
2. What is the typical voltage supply range for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The typical voltage supply range for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is 2.7V to 3.6V.
3. Can the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory be used in automotive applications?
Yes, the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is designed for automotive applications and meets the necessary requirements.
4. What is the maximum program/erase cycle endurance of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The maximum program/erase cycle endurance of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is 3000 cycles.
5. Does the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory support a wide range of interfaces?
Yes, the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory supports a wide range of interfaces including ONFI 2.3, Toggle 1.0, and asynchronous.
6. What is the typical power consumption of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory during read operations?
The typical power consumption of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory during read operations is 25mA.
7. Is the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory compatible with industrial temperature ranges?
Yes, the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is compatible with industrial temperature ranges from -40°C to 85°C.
8. What are the available package options for the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is available in a 48-ball TFBGA package.
9. Can the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory be operated in a low-power mode?
Yes, the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory can be operated in a low-power mode to conserve energy.
10. What is the data retention period of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory?
The data retention period of the MT29F1G08ABAEAH4-AATX:E TR NAND flash memory is 10 years.
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