MT29F128G08CECGBJ4-5M:G Micron Technology Inc. IC FLASH 128GBIT 132VBGA
Integraallülitused (IC-d)
Tootja number:
MT29F128G08CECGBJ4-5M:G
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 128GBIT 132VBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
128Gb (16G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
-
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
62,750
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F128G08CECGBJ4-5M:G Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F128G08CECGBJ4-5M:G konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F128G08CECGBJ4-5M:G. Parima hinna saamiseks saidil MT29F128G08CECGBJ4-5M:G võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F128G08CECGBJ4-5M:G Iseärasused
MT29F128G08CECGBJ4-5M:G is produced by Micron Technology Inc., belongs to Mälu.
MT29F128G08CECGBJ4-5M:G Toote üksikasjad
:
MT29F128G08CECGBJ4-5M:G – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F128G08CECGBJ4-5M:G, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F128G08CECGBJ4-5M:G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F128G08CECGBJ4-5M:G (PDF), hind MT29F128G08CECGBJ4-5M:G, Pinout MT29F128G08CECGBJ4-5M:G, manuaal MT29F128G08CECGBJ4-5M:G Ja MT29F128G08CECGBJ4-5M:G asenduslahendus.
MT29F128G08CECGBJ4-5M:G, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F128G08CECGBJ4-5M:G on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F128G08CECGBJ4-5M:G (PDF), hind MT29F128G08CECGBJ4-5M:G, Pinout MT29F128G08CECGBJ4-5M:G, manuaal MT29F128G08CECGBJ4-5M:G Ja MT29F128G08CECGBJ4-5M:G asenduslahendus.
MT29F128G08CECGBJ4-5M:G FAQ
:
1. What is the maximum capacity of the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The MT29F128G08CECGBJ4-5M:G NAND flash memory has a maximum capacity of 128 gigabits.
2. What interface does the MT29F128G08CECGBJ4-5M:G NAND flash memory use for data transfer?
The MT29F128G08CECGBJ4-5M:G NAND flash memory uses a standard ONFI 3.0 synchronous interface for data transfer.
3. What is the operating voltage range of the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The operating voltage range of the MT29F128G08CECGBJ4-5M:G NAND flash memory is 2.7V to 3.6V.
4. Can the MT29F128G08CECGBJ4-5M:G NAND flash memory withstand industrial temperature ranges?
Yes, the MT29F128G08CECGBJ4-5M:G NAND flash memory is designed to operate reliably within industrial temperature ranges.
5. What are the typical read and program times for the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The typical read time for the MT29F128G08CECGBJ4-5M:G NAND flash memory is 25 microseconds, and the typical program time is 2000 microseconds.
6. Does the MT29F128G08CECGBJ4-5M:G NAND flash memory support hardware data protection features?
Yes, the MT29F128G08CECGBJ4-5M:G NAND flash memory supports hardware data protection features such as internal ECC and bad block management.
7. What is the erase block size of the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The erase block size of the MT29F128G08CECGBJ4-5M:G NAND flash memory is 256 kilobytes.
8. Can the MT29F128G08CECGBJ4-5M:G NAND flash memory be used in automotive applications?
Yes, the MT29F128G08CECGBJ4-5M:G NAND flash memory is suitable for use in automotive applications and complies with AEC-Q100 requirements.
9. What is the data retention period of the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The data retention period of the MT29F128G08CECGBJ4-5M:G NAND flash memory is at least 10 years.
10. Does the MT29F128G08CECGBJ4-5M:G NAND flash memory support multiple plane operations?
Yes, the MT29F128G08CECGBJ4-5M:G NAND flash memory supports multiple plane operations for improved performance and efficiency.
The MT29F128G08CECGBJ4-5M:G NAND flash memory has a maximum capacity of 128 gigabits.
2. What interface does the MT29F128G08CECGBJ4-5M:G NAND flash memory use for data transfer?
The MT29F128G08CECGBJ4-5M:G NAND flash memory uses a standard ONFI 3.0 synchronous interface for data transfer.
3. What is the operating voltage range of the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The operating voltage range of the MT29F128G08CECGBJ4-5M:G NAND flash memory is 2.7V to 3.6V.
4. Can the MT29F128G08CECGBJ4-5M:G NAND flash memory withstand industrial temperature ranges?
Yes, the MT29F128G08CECGBJ4-5M:G NAND flash memory is designed to operate reliably within industrial temperature ranges.
5. What are the typical read and program times for the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The typical read time for the MT29F128G08CECGBJ4-5M:G NAND flash memory is 25 microseconds, and the typical program time is 2000 microseconds.
6. Does the MT29F128G08CECGBJ4-5M:G NAND flash memory support hardware data protection features?
Yes, the MT29F128G08CECGBJ4-5M:G NAND flash memory supports hardware data protection features such as internal ECC and bad block management.
7. What is the erase block size of the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The erase block size of the MT29F128G08CECGBJ4-5M:G NAND flash memory is 256 kilobytes.
8. Can the MT29F128G08CECGBJ4-5M:G NAND flash memory be used in automotive applications?
Yes, the MT29F128G08CECGBJ4-5M:G NAND flash memory is suitable for use in automotive applications and complies with AEC-Q100 requirements.
9. What is the data retention period of the MT29F128G08CECGBJ4-5M:G NAND flash memory?
The data retention period of the MT29F128G08CECGBJ4-5M:G NAND flash memory is at least 10 years.
10. Does the MT29F128G08CECGBJ4-5M:G NAND flash memory support multiple plane operations?
Yes, the MT29F128G08CECGBJ4-5M:G NAND flash memory supports multiple plane operations for improved performance and efficiency.
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