MT29F128G08CBCCBH6-6R:C TR Micron Technology Inc. IC FLASH 128GBIT 152VBGA
Integraallülitused (IC-d)
Tootja number:
MT29F128G08CBCCBH6-6R:C TR
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 128GBIT 152VBGA
RoHs olek:

Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
166MHz
Mälu liides :
Parallel
Mälu suurus :
128Gb (16G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
58,628
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29F128G08CBCCBH6-6R:C TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29F128G08CBCCBH6-6R:C TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29F128G08CBCCBH6-6R:C TR. Parima hinna saamiseks saidil MT29F128G08CBCCBH6-6R:C TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29F128G08CBCCBH6-6R:C TR Iseärasused
MT29F128G08CBCCBH6-6R:C TR is produced by Micron Technology Inc., belongs to Mälu.
MT29F128G08CBCCBH6-6R:C TR Toote üksikasjad
:
MT29F128G08CBCCBH6-6R:C TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29F128G08CBCCBH6-6R:C TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F128G08CBCCBH6-6R:C TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F128G08CBCCBH6-6R:C TR (PDF), hind MT29F128G08CBCCBH6-6R:C TR, Pinout MT29F128G08CBCCBH6-6R:C TR, manuaal MT29F128G08CBCCBH6-6R:C TR Ja MT29F128G08CBCCBH6-6R:C TR asenduslahendus.
MT29F128G08CBCCBH6-6R:C TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29F128G08CBCCBH6-6R:C TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29F128G08CBCCBH6-6R:C TR (PDF), hind MT29F128G08CBCCBH6-6R:C TR, Pinout MT29F128G08CBCCBH6-6R:C TR, manuaal MT29F128G08CBCCBH6-6R:C TR Ja MT29F128G08CBCCBH6-6R:C TR asenduslahendus.
MT29F128G08CBCCBH6-6R:C TR FAQ
:
1. What is the maximum capacity of the MT29F128G08CBCCBH6-6R:C TR NAND flash memory?
The MT29F128G08CBCCBH6-6R:C TR NAND flash memory has a maximum capacity of 128 gigabits.
2. What interface does the MT29F128G08CBCCBH6-6R:C TR use for data transfer?
The MT29F128G08CBCCBH6-6R:C TR uses a standard NAND flash interface for data transfer.
3. What are the operating voltage requirements for the MT29F128G08CBCCBH6-6R:C TR?
The operating voltage range for the MT29F128G08CBCCBH6-6R:C TR is typically 2.7V to 3.6V.
4. Can the MT29F128G08CBCCBH6-6R:C TR support hardware-based data protection features?
Yes, the MT29F128G08CBCCBH6-6R:C TR supports hardware-based data protection features for enhanced security.
5. What is the typical program and erase cycle endurance of the MT29F128G08CBCCBH6-6R:C TR?
The MT29F128G08CBCCBH6-6R:C TR has a typical program and erase cycle endurance of 10,000 cycles.
6. Does the MT29F128G08CBCCBH6-6R:C TR support advanced wear-leveling algorithms?
Yes, the MT29F128G08CBCCBH6-6R:C TR supports advanced wear-leveling algorithms to ensure uniform usage of memory blocks.
7. What are the temperature range specifications for the MT29F128G08CBCCBH6-6R:C TR?
The MT29F128G08CBCCBH6-6R:C TR is designed to operate within a temperature range of -40°C to 85°C.
8. Can the MT29F128G08CBCCBH6-6R:C TR be used in automotive applications?
Yes, the MT29F128G08CBCCBH6-6R:C TR is suitable for automotive applications and complies with relevant industry standards.
9. Is the MT29F128G08CBCCBH6-6R:C TR compatible with various NAND controller ICs?
Yes, the MT29F128G08CBCCBH6-6R:C TR is compatible with a wide range of NAND controller ICs for flexible integration.
10. What are the key reliability features of the MT29F128G08CBCCBH6-6R:C TR?
The MT29F128G08CBCCBH6-6R:C TR incorporates advanced error correction and detection mechanisms to ensure high reliability in data storage applications.
The MT29F128G08CBCCBH6-6R:C TR NAND flash memory has a maximum capacity of 128 gigabits.
2. What interface does the MT29F128G08CBCCBH6-6R:C TR use for data transfer?
The MT29F128G08CBCCBH6-6R:C TR uses a standard NAND flash interface for data transfer.
3. What are the operating voltage requirements for the MT29F128G08CBCCBH6-6R:C TR?
The operating voltage range for the MT29F128G08CBCCBH6-6R:C TR is typically 2.7V to 3.6V.
4. Can the MT29F128G08CBCCBH6-6R:C TR support hardware-based data protection features?
Yes, the MT29F128G08CBCCBH6-6R:C TR supports hardware-based data protection features for enhanced security.
5. What is the typical program and erase cycle endurance of the MT29F128G08CBCCBH6-6R:C TR?
The MT29F128G08CBCCBH6-6R:C TR has a typical program and erase cycle endurance of 10,000 cycles.
6. Does the MT29F128G08CBCCBH6-6R:C TR support advanced wear-leveling algorithms?
Yes, the MT29F128G08CBCCBH6-6R:C TR supports advanced wear-leveling algorithms to ensure uniform usage of memory blocks.
7. What are the temperature range specifications for the MT29F128G08CBCCBH6-6R:C TR?
The MT29F128G08CBCCBH6-6R:C TR is designed to operate within a temperature range of -40°C to 85°C.
8. Can the MT29F128G08CBCCBH6-6R:C TR be used in automotive applications?
Yes, the MT29F128G08CBCCBH6-6R:C TR is suitable for automotive applications and complies with relevant industry standards.
9. Is the MT29F128G08CBCCBH6-6R:C TR compatible with various NAND controller ICs?
Yes, the MT29F128G08CBCCBH6-6R:C TR is compatible with a wide range of NAND controller ICs for flexible integration.
10. What are the key reliability features of the MT29F128G08CBCCBH6-6R:C TR?
The MT29F128G08CBCCBH6-6R:C TR incorporates advanced error correction and detection mechanisms to ensure high reliability in data storage applications.
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