MT29E512G08CMCBBH7-6:B TR Micron Technology Inc. IC FLASH 512GBIT 167MHZ 152TBGA
Integraallülitused (IC-d)
Tootja number:
MT29E512G08CMCBBH7-6:B TR
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 512GBIT 167MHZ 152TBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
167MHz
Mälu liides :
Parallel
Mälu suurus :
512Gb (64G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
-
Pakend/ümbris :
-
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
-
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
57,224
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT29E512G08CMCBBH7-6:B TR Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT29E512G08CMCBBH7-6:B TR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT29E512G08CMCBBH7-6:B TR. Parima hinna saamiseks saidil MT29E512G08CMCBBH7-6:B TR võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT29E512G08CMCBBH7-6:B TR Iseärasused
MT29E512G08CMCBBH7-6:B TR is produced by Micron Technology Inc., belongs to Mälu.
MT29E512G08CMCBBH7-6:B TR Toote üksikasjad
:
MT29E512G08CMCBBH7-6:B TR – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT29E512G08CMCBBH7-6:B TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29E512G08CMCBBH7-6:B TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29E512G08CMCBBH7-6:B TR (PDF), hind MT29E512G08CMCBBH7-6:B TR, Pinout MT29E512G08CMCBBH7-6:B TR, manuaal MT29E512G08CMCBBH7-6:B TR Ja MT29E512G08CMCBBH7-6:B TR asenduslahendus.
MT29E512G08CMCBBH7-6:B TR, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT29E512G08CMCBBH7-6:B TR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT29E512G08CMCBBH7-6:B TR (PDF), hind MT29E512G08CMCBBH7-6:B TR, Pinout MT29E512G08CMCBBH7-6:B TR, manuaal MT29E512G08CMCBBH7-6:B TR Ja MT29E512G08CMCBBH7-6:B TR asenduslahendus.
MT29E512G08CMCBBH7-6:B TR FAQ
:
1. What is the maximum operating frequency of the MT29E512G08CMCBBH7-6:B TR?
The maximum operating frequency of the MT29E512G08CMCBBH7-6:B TR is 1066MHz.
2. What is the power supply voltage range for this semiconductor?
The power supply voltage range for the MT29E512G08CMCBBH7-6:B TR is 2.7V to 3.6V.
3. Can this semiconductor operate in industrial temperature ranges?
Yes, the MT29E512G08CMCBBH7-6:B TR can operate in industrial temperature ranges from -40°C to 85°C.
4. What is the typical standby current for this semiconductor?
The typical standby current for the MT29E512G08CMCBBH7-6:B TR is 1μA.
5. Does this semiconductor support on-die termination (ODT)?
Yes, the MT29E512G08CMCBBH7-6:B TR supports on-die termination (ODT).
6. What is the burst length supported by this semiconductor?
This semiconductor supports burst lengths of 8 and 4.
7. Is the MT29E512G08CMCBBH7-6:B TR compatible with DDR3 SDRAM standards?
Yes, the MT29E512G08CMCBBH7-6:B TR is compatible with DDR3 SDRAM standards.
8. What is the refresh rate for this semiconductor?
The refresh rate for the MT29E512G08CMCBBH7-6:B TR is every 7.8μs.
9. Can this semiconductor operate at different CAS latency settings?
Yes, the MT29E512G08CMMCBBH7-6:B TR can operate at different CAS latency settings.
10. What is the maximum clock cycle time for this semiconductor?
The maximum clock cycle time for the MT29E512G08CMCBBH7-6:B TR is 940ps.
The maximum operating frequency of the MT29E512G08CMCBBH7-6:B TR is 1066MHz.
2. What is the power supply voltage range for this semiconductor?
The power supply voltage range for the MT29E512G08CMCBBH7-6:B TR is 2.7V to 3.6V.
3. Can this semiconductor operate in industrial temperature ranges?
Yes, the MT29E512G08CMCBBH7-6:B TR can operate in industrial temperature ranges from -40°C to 85°C.
4. What is the typical standby current for this semiconductor?
The typical standby current for the MT29E512G08CMCBBH7-6:B TR is 1μA.
5. Does this semiconductor support on-die termination (ODT)?
Yes, the MT29E512G08CMCBBH7-6:B TR supports on-die termination (ODT).
6. What is the burst length supported by this semiconductor?
This semiconductor supports burst lengths of 8 and 4.
7. Is the MT29E512G08CMCBBH7-6:B TR compatible with DDR3 SDRAM standards?
Yes, the MT29E512G08CMCBBH7-6:B TR is compatible with DDR3 SDRAM standards.
8. What is the refresh rate for this semiconductor?
The refresh rate for the MT29E512G08CMCBBH7-6:B TR is every 7.8μs.
9. Can this semiconductor operate at different CAS latency settings?
Yes, the MT29E512G08CMMCBBH7-6:B TR can operate at different CAS latency settings.
10. What is the maximum clock cycle time for this semiconductor?
The maximum clock cycle time for the MT29E512G08CMCBBH7-6:B TR is 940ps.
MT29E512G08CMCBBH7-6:B TR Seotud märksõnad
:
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