MT28F400B3SG-8 TET Micron Technology Inc. IC FLASH 4MBIT 80NS 44SOP
Integraallülitused (IC-d)
Tootja number:
MT28F400B3SG-8 TET
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 4MBIT 80NS 44SOP
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
80ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
4Mb (512K x 8, 256K x 16)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
44-SOIC (0.496", 12.60mm Width)
Pakendamine :
Bulk
Pinge – toide :
3 V ~ 3.6 V
seeria :
-
Tarnija seadmepakett :
44-SOP
Tehnoloogia :
FLASH - NOR
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
80ns
Laos
25,205
Ühiku hind:
Võtke meiega ühendust Pakkumine
MT28F400B3SG-8 TET Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele MT28F400B3SG-8 TET konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc MT28F400B3SG-8 TET. Parima hinna saamiseks saidil MT28F400B3SG-8 TET võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
MT28F400B3SG-8 TET Iseärasused
MT28F400B3SG-8 TET is produced by Micron Technology Inc., belongs to Mälu.
MT28F400B3SG-8 TET Toote üksikasjad
:
MT28F400B3SG-8 TET – Mälu disainitud puhvervõimendid ja toodetud Micron Technology Inc..
MT28F400B3SG-8 TET, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT28F400B3SG-8 TET on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT28F400B3SG-8 TET (PDF), hind MT28F400B3SG-8 TET, Pinout MT28F400B3SG-8 TET, manuaal MT28F400B3SG-8 TET Ja MT28F400B3SG-8 TET asenduslahendus.
MT28F400B3SG-8 TET, mida pakub Micron Technology Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC MT28F400B3SG-8 TET on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis MT28F400B3SG-8 TET (PDF), hind MT28F400B3SG-8 TET, Pinout MT28F400B3SG-8 TET, manuaal MT28F400B3SG-8 TET Ja MT28F400B3SG-8 TET asenduslahendus.
MT28F400B3SG-8 TET FAQ
:
1. What is the maximum operating temperature for the MT28F400B3SG-8 TET semiconductor?
The maximum operating temperature for the MT28F400B3SG-8 TET semiconductor is 85°C.
2. What is the typical erase and program cycle endurance for this semiconductor?
The typical erase and program cycle endurance for the MT28F400B3SG-8 TET semiconductor is 100,000 cycles.
3. Can you provide the voltage requirements for both read and program operations of this semiconductor?
The voltage requirements for read operations of the MT28F400B3SG-8 TET semiconductor are 2.7V to 3.6V, while the voltage requirements for program operations are 4.5V to 5.5V.
4. What is the size of the MT28F400B3SG-8 TET semiconductor in terms of memory capacity?
The MT28F400B3SG-8 TET semiconductor has a memory capacity of 4 Megabits (512K x 8).
5. Does this semiconductor support simultaneous read and program operations?
Yes, the MT28F400B3SG-8 TET semiconductor supports simultaneous read and program operations.
6. What is the typical access time for read operations of this semiconductor?
The typical access time for read operations of the MT28F400B3SG-8 TET semiconductor is 90ns.
7. Can you provide information about the package type and dimensions of this semiconductor?
The MT28F400B3SG-8 TET semiconductor is available in a 48-ball Fine-pitch BGA package with dimensions of 8mm x 10mm.
8. What are the recommended storage conditions for this semiconductor when not in use?
It is recommended to store the MT28F400B3SG-8 TET semiconductor at a temperature range of -65°C to 150°C and a humidity range of 0% to 100%.
9. Is there a built-in power-saving mode in this semiconductor?
Yes, the MT28F400B3SG-8 TET semiconductor features a built-in power-saving mode to reduce power consumption during idle periods.
10. Can you provide details about the data retention capability of this semiconductor?
The MT28F400B3SG-8 TET semiconductor has a data retention capability of 20 years at 125°C.
The maximum operating temperature for the MT28F400B3SG-8 TET semiconductor is 85°C.
2. What is the typical erase and program cycle endurance for this semiconductor?
The typical erase and program cycle endurance for the MT28F400B3SG-8 TET semiconductor is 100,000 cycles.
3. Can you provide the voltage requirements for both read and program operations of this semiconductor?
The voltage requirements for read operations of the MT28F400B3SG-8 TET semiconductor are 2.7V to 3.6V, while the voltage requirements for program operations are 4.5V to 5.5V.
4. What is the size of the MT28F400B3SG-8 TET semiconductor in terms of memory capacity?
The MT28F400B3SG-8 TET semiconductor has a memory capacity of 4 Megabits (512K x 8).
5. Does this semiconductor support simultaneous read and program operations?
Yes, the MT28F400B3SG-8 TET semiconductor supports simultaneous read and program operations.
6. What is the typical access time for read operations of this semiconductor?
The typical access time for read operations of the MT28F400B3SG-8 TET semiconductor is 90ns.
7. Can you provide information about the package type and dimensions of this semiconductor?
The MT28F400B3SG-8 TET semiconductor is available in a 48-ball Fine-pitch BGA package with dimensions of 8mm x 10mm.
8. What are the recommended storage conditions for this semiconductor when not in use?
It is recommended to store the MT28F400B3SG-8 TET semiconductor at a temperature range of -65°C to 150°C and a humidity range of 0% to 100%.
9. Is there a built-in power-saving mode in this semiconductor?
Yes, the MT28F400B3SG-8 TET semiconductor features a built-in power-saving mode to reduce power consumption during idle periods.
10. Can you provide details about the data retention capability of this semiconductor?
The MT28F400B3SG-8 TET semiconductor has a data retention capability of 20 years at 125°C.
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