IXDD504SIAT/R IXYS IC GATE DRIVER 4A 8-SOIC
Integraallülitused (IC-d)
Tootja number:
IXDD504SIAT/R
Tootja:
Tootekategooria:
Kirjeldus:
IC GATE DRIVER 4A 8-SOIC
RoHs olek:
Andmetabelid:
juhitud konfiguratsioon :
Low-Side
Juhtide arv :
2
Kanali tüüp :
Independent
Kõrge külgpinge – max (bootstrap) :
-
Loogikapinge - VIL, VIH :
0.8V, 3V
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
4.5 V ~ 30 V
Praegune – tippväljund (allikas, valamu) :
4A, 4A
seeria :
-
Sisendtüüp :
Non-Inverting
Tarnija seadmepakett :
8-SOIC
Töötemperatuur :
-55°C ~ 150°C (TJ)
Tõusu/languse aeg (tüüp) :
9ns, 8ns
Värava tüüp :
IGBT, N-Channel, P-Channel MOSFET
Laos
20,035
Ühiku hind:
Võtke meiega ühendust Pakkumine
IXDD504SIAT/R Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele IXDD504SIAT/R konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc IXDD504SIAT/R. Parima hinna saamiseks saidil IXDD504SIAT/R võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
IXDD504SIAT/R Iseärasused
IXDD504SIAT/R is produced by IXYS, belongs to PMIC – värava draiverid.
IXDD504SIAT/R Toote üksikasjad
:
IXDD504SIAT/R – PMIC – värava draiverid disainitud puhvervõimendid ja toodetud IXYS.
IXDD504SIAT/R, mida pakub IXYS, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IXDD504SIAT/R on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IXDD504SIAT/R (PDF), hind IXDD504SIAT/R, Pinout IXDD504SIAT/R, manuaal IXDD504SIAT/R Ja IXDD504SIAT/R asenduslahendus.
IXDD504SIAT/R, mida pakub IXYS, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IXDD504SIAT/R on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IXDD504SIAT/R (PDF), hind IXDD504SIAT/R, Pinout IXDD504SIAT/R, manuaal IXDD504SIAT/R Ja IXDD504SIAT/R asenduslahendus.
IXDD504SIAT/R FAQ
:
1. What is the maximum input voltage for the IXDD504SIAT/R?
The maximum input voltage for the IXDD504SIAT/R is 35 volts.
2. What is the typical input threshold voltage?
The typical input threshold voltage for the IXDD504SIAT/R is 2.5 volts.
3. What is the maximum output current for this device?
The maximum output current for the IXDD504SIAT/R is 4 amperes.
4. Can this device operate at high temperatures?
Yes, the IXDD504SIAT/R is designed to operate at high temperatures, with a maximum operating temperature of 125°C.
5. What is the typical propagation delay?
The typical propagation delay for the IXDD504SIAT/R is 22 nanoseconds.
6. Is the IXDD504SIAT/R suitable for driving MOSFETs?
Yes, the IXDD504SIAT/R is specifically designed for driving MOSFETs.
7. Does this device have built-in undervoltage lockout protection?
Yes, the IXDD504SIAT/R features built-in undervoltage lockout protection.
8. What is the maximum supply voltage for this device?
The maximum supply voltage for the IXDD504SIAT/R is 35 volts.
9. Can this device be used in automotive applications?
Yes, the IXDD504SIAT/R is suitable for use in automotive applications.
10. What is the typical output rise and fall time?
The typical output rise and fall time for the IXDD504SIAT/R is 15 nanoseconds.
The maximum input voltage for the IXDD504SIAT/R is 35 volts.
2. What is the typical input threshold voltage?
The typical input threshold voltage for the IXDD504SIAT/R is 2.5 volts.
3. What is the maximum output current for this device?
The maximum output current for the IXDD504SIAT/R is 4 amperes.
4. Can this device operate at high temperatures?
Yes, the IXDD504SIAT/R is designed to operate at high temperatures, with a maximum operating temperature of 125°C.
5. What is the typical propagation delay?
The typical propagation delay for the IXDD504SIAT/R is 22 nanoseconds.
6. Is the IXDD504SIAT/R suitable for driving MOSFETs?
Yes, the IXDD504SIAT/R is specifically designed for driving MOSFETs.
7. Does this device have built-in undervoltage lockout protection?
Yes, the IXDD504SIAT/R features built-in undervoltage lockout protection.
8. What is the maximum supply voltage for this device?
The maximum supply voltage for the IXDD504SIAT/R is 35 volts.
9. Can this device be used in automotive applications?
Yes, the IXDD504SIAT/R is suitable for use in automotive applications.
10. What is the typical output rise and fall time?
The typical output rise and fall time for the IXDD504SIAT/R is 15 nanoseconds.
IXDD504SIAT/R Seotud märksõnad
:
IXDD504SIAT/R Hind
IXDD504SIAT/R Maalimine
IXDD504SIAT/R Tihvtide pinge
Pakkumised: Kiire hinnapakkumise kontroll
Minimaalne tellimus: 1
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