IX6R11S3T/R IXYS IC DRVR HALF BRIDGE 4A 16-SOIC
Integraallülitused (IC-d)
Tootja number:
IX6R11S3T/R
Tootja:
Tootekategooria:
Kirjeldus:
IC DRVR HALF BRIDGE 4A 16-SOIC
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
IX6R11S3T/R Andmetabelid(PDF)
juhitud konfiguratsioon :
Half-Bridge
Juhtide arv :
2
Kanali tüüp :
Independent
Kõrge külgpinge – max (bootstrap) :
600V
Loogikapinge - VIL, VIH :
6V, 9.6V
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
16-SOIC (0.295", 7.50mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
10 V ~ 35 V
Praegune – tippväljund (allikas, valamu) :
6A, 6A
seeria :
-
Sisendtüüp :
Non-Inverting
Tarnija seadmepakett :
16-SOIC
Töötemperatuur :
-40°C ~ 125°C (TA)
Tõusu/languse aeg (tüüp) :
25ns, 17ns
Värava tüüp :
IGBT, N-Channel MOSFET
Laos
37,829
Ühiku hind:
Võtke meiega ühendust Pakkumine
IX6R11S3T/R Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele IX6R11S3T/R konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc IX6R11S3T/R. Parima hinna saamiseks saidil IX6R11S3T/R võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
IX6R11S3T/R Iseärasused
IX6R11S3T/R is produced by IXYS, belongs to PMIC – värava draiverid.
IX6R11S3T/R Toote üksikasjad
:
IX6R11S3T/R – PMIC – värava draiverid disainitud puhvervõimendid ja toodetud IXYS.
IX6R11S3T/R, mida pakub IXYS, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IX6R11S3T/R on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IX6R11S3T/R (PDF), hind IX6R11S3T/R, Pinout IX6R11S3T/R, manuaal IX6R11S3T/R Ja IX6R11S3T/R asenduslahendus.
IX6R11S3T/R, mida pakub IXYS, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IX6R11S3T/R on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IX6R11S3T/R (PDF), hind IX6R11S3T/R, Pinout IX6R11S3T/R, manuaal IX6R11S3T/R Ja IX6R11S3T/R asenduslahendus.
IX6R11S3T/R FAQ
:
1. What is the maximum operating temperature of the IX6R11S3T/R semiconductor?
The maximum operating temperature of the IX6R11S3T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX6R11S3T/R diode at a current of 10mA?
The typical forward voltage drop for the IX6R11S3T/R diode at a current of 10mA is 0.7V.
3. Can the IX6R11S3T/R semiconductor be used in high-frequency applications?
Yes, the IX6R11S3T/R semiconductor can be used in high-frequency applications due to its low capacitance and fast switching characteristics.
4. What is the maximum continuous forward current rating for the IX6R11S3T/R diode?
The maximum continuous forward current rating for the IX6R11S3T/R diode is 200mA.
5. Does the IX6R11S3T/R semiconductor require a heat sink for operation?
It is recommended to use a heat sink for the IX6R11S3T/R semiconductor when operating at high currents or in elevated ambient temperatures to ensure optimal performance and reliability.
6. What is the reverse recovery time of the IX6R11S3T/R diode?
The reverse recovery time of the IX6R11S3T/R diode is typically 50ns.
7. Is the IX6R11S3T/R semiconductor RoHS compliant?
Yes, the IX6R11S3T/R semiconductor is RoHS compliant, meeting the requirements for lead-free and environmentally friendly manufacturing.
8. What is the maximum reverse voltage rating for the IX6R11S3T/R diode?
The maximum reverse voltage rating for the IX6R11S3T/R diode is 75V.
9. Can the IX6R11S3T/R semiconductor withstand mechanical shock and vibration?
Yes, the IX6R11S3T/R semiconductor is designed to withstand mechanical shock and vibration within specified limits as outlined in the datasheet.
10. What is the typical junction capacitance of the IX6R11S3T/R diode at a reverse bias of 5V?
The typical junction capacitance of the IX6R11S3T/R diode at a reverse bias of 5V is 15pF.
The maximum operating temperature of the IX6R11S3T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX6R11S3T/R diode at a current of 10mA?
The typical forward voltage drop for the IX6R11S3T/R diode at a current of 10mA is 0.7V.
3. Can the IX6R11S3T/R semiconductor be used in high-frequency applications?
Yes, the IX6R11S3T/R semiconductor can be used in high-frequency applications due to its low capacitance and fast switching characteristics.
4. What is the maximum continuous forward current rating for the IX6R11S3T/R diode?
The maximum continuous forward current rating for the IX6R11S3T/R diode is 200mA.
5. Does the IX6R11S3T/R semiconductor require a heat sink for operation?
It is recommended to use a heat sink for the IX6R11S3T/R semiconductor when operating at high currents or in elevated ambient temperatures to ensure optimal performance and reliability.
6. What is the reverse recovery time of the IX6R11S3T/R diode?
The reverse recovery time of the IX6R11S3T/R diode is typically 50ns.
7. Is the IX6R11S3T/R semiconductor RoHS compliant?
Yes, the IX6R11S3T/R semiconductor is RoHS compliant, meeting the requirements for lead-free and environmentally friendly manufacturing.
8. What is the maximum reverse voltage rating for the IX6R11S3T/R diode?
The maximum reverse voltage rating for the IX6R11S3T/R diode is 75V.
9. Can the IX6R11S3T/R semiconductor withstand mechanical shock and vibration?
Yes, the IX6R11S3T/R semiconductor is designed to withstand mechanical shock and vibration within specified limits as outlined in the datasheet.
10. What is the typical junction capacitance of the IX6R11S3T/R diode at a reverse bias of 5V?
The typical junction capacitance of the IX6R11S3T/R diode at a reverse bias of 5V is 15pF.
IX6R11S3T/R Seotud märksõnad
:
IX6R11S3T/R Hind
IX6R11S3T/R Maalimine
IX6R11S3T/R Tihvtide pinge
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