IX4R11S3T/R IXYS IC DRVR HALF BRIDGE 4A 16-SOIC
Integraallülitused (IC-d)
Tootja number:
IX4R11S3T/R
Tootja:
Tootekategooria:
Kirjeldus:
IC DRVR HALF BRIDGE 4A 16-SOIC
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
IX4R11S3T/R Andmetabelid(PDF)
juhitud konfiguratsioon :
Half-Bridge
Juhtide arv :
2
Kanali tüüp :
Independent
Kõrge külgpinge – max (bootstrap) :
650V
Loogikapinge - VIL, VIH :
6V, 7V
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
16-SOIC (0.295", 7.50mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
10 V ~ 35 V
Praegune – tippväljund (allikas, valamu) :
4A, 4A
seeria :
-
Sisendtüüp :
Non-Inverting
Tarnija seadmepakett :
16-SOIC
Töötemperatuur :
-40°C ~ 150°C (TJ)
Tõusu/languse aeg (tüüp) :
23ns, 22ns
Värava tüüp :
IGBT, N-Channel MOSFET
Laos
17,792
Ühiku hind:
Võtke meiega ühendust Pakkumine
IX4R11S3T/R Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele IX4R11S3T/R konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc IX4R11S3T/R. Parima hinna saamiseks saidil IX4R11S3T/R võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
IX4R11S3T/R Iseärasused
IX4R11S3T/R is produced by IXYS, belongs to PMIC – värava draiverid.
IX4R11S3T/R Toote üksikasjad
:
IX4R11S3T/R – PMIC – värava draiverid disainitud puhvervõimendid ja toodetud IXYS.
IX4R11S3T/R, mida pakub IXYS, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IX4R11S3T/R on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IX4R11S3T/R (PDF), hind IX4R11S3T/R, Pinout IX4R11S3T/R, manuaal IX4R11S3T/R Ja IX4R11S3T/R asenduslahendus.
IX4R11S3T/R, mida pakub IXYS, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC IX4R11S3T/R on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis IX4R11S3T/R (PDF), hind IX4R11S3T/R, Pinout IX4R11S3T/R, manuaal IX4R11S3T/R Ja IX4R11S3T/R asenduslahendus.
IX4R11S3T/R FAQ
:
1. What is the maximum operating temperature for the IX4R11S3T/R semiconductor?
The maximum operating temperature for the IX4R11S3T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX4R11S3T/R diode?
The typical forward voltage drop for the IX4R11S3T/R diode is 0.7V.
3. Can the IX4R11S3T/R semiconductor be used in high-frequency applications?
Yes, the IX4R11S3T/R semiconductor can be used in high-frequency applications due to its fast switching characteristics.
4. What is the maximum current rating for the IX4R11S3T/R semiconductor?
The maximum current rating for the IX4R11S3T/R semiconductor is 20A.
5. Does the IX4R11S3T/R semiconductor require a heat sink for proper operation?
Yes, the IX4R11S3T/R semiconductor requires a heat sink to dissipate heat effectively during operation.
6. What is the typical reverse recovery time for the IX4R11S3T/R diode?
The typical reverse recovery time for the IX4R11S3T/R diode is 35ns.
7. Is the IX4R11S3T/R semiconductor suitable for automotive applications?
Yes, the IX4R11S3T/R semiconductor is suitable for automotive applications due to its rugged construction and reliability.
8. What is the maximum junction temperature for the IX4R11S3T/R semiconductor?
The maximum junction temperature for the IX4R11S3T/R semiconductor is 175°C.
9. Can the IX4R11S3T/R semiconductor be operated in parallel for higher current applications?
Yes, the IX4R11S3T/R semiconductor can be operated in parallel to achieve higher current handling capabilities.
10. What is the typical leakage current for the IX4R11S3T/R semiconductor at room temperature?
The typical leakage current for the IX4R11S3T/R semiconductor at room temperature is 10μA.
The maximum operating temperature for the IX4R11S3T/R semiconductor is 150°C.
2. What is the typical forward voltage drop for the IX4R11S3T/R diode?
The typical forward voltage drop for the IX4R11S3T/R diode is 0.7V.
3. Can the IX4R11S3T/R semiconductor be used in high-frequency applications?
Yes, the IX4R11S3T/R semiconductor can be used in high-frequency applications due to its fast switching characteristics.
4. What is the maximum current rating for the IX4R11S3T/R semiconductor?
The maximum current rating for the IX4R11S3T/R semiconductor is 20A.
5. Does the IX4R11S3T/R semiconductor require a heat sink for proper operation?
Yes, the IX4R11S3T/R semiconductor requires a heat sink to dissipate heat effectively during operation.
6. What is the typical reverse recovery time for the IX4R11S3T/R diode?
The typical reverse recovery time for the IX4R11S3T/R diode is 35ns.
7. Is the IX4R11S3T/R semiconductor suitable for automotive applications?
Yes, the IX4R11S3T/R semiconductor is suitable for automotive applications due to its rugged construction and reliability.
8. What is the maximum junction temperature for the IX4R11S3T/R semiconductor?
The maximum junction temperature for the IX4R11S3T/R semiconductor is 175°C.
9. Can the IX4R11S3T/R semiconductor be operated in parallel for higher current applications?
Yes, the IX4R11S3T/R semiconductor can be operated in parallel to achieve higher current handling capabilities.
10. What is the typical leakage current for the IX4R11S3T/R semiconductor at room temperature?
The typical leakage current for the IX4R11S3T/R semiconductor at room temperature is 10μA.
IX4R11S3T/R Seotud märksõnad
:
IX4R11S3T/R Hind
IX4R11S3T/R Maalimine
IX4R11S3T/R Tihvtide pinge
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