71V67703S80PFG8 IDT, Integrated Device Technology Inc IC SRAM 9MBIT 8NS 100TQFP
Integraallülitused (IC-d)
Tootja number:
71V67703S80PFG8
Tootekategooria:
Kirjeldus:
IC SRAM 9MBIT 8NS 100TQFP
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
8ns
Kella sagedus :
100MHz
Mälu liides :
Parallel
Mälu suurus :
9Mb (256K x 36)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
100-LQFP
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
3.135 V ~ 3.465 V
seeria :
-
Tarnija seadmepakett :
100-TQFP (14x14)
Tehnoloogia :
SRAM - Synchronous
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
50,126
Ühiku hind:
Võtke meiega ühendust Pakkumine
71V67703S80PFG8 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 71V67703S80PFG8 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 71V67703S80PFG8. Parima hinna saamiseks saidil 71V67703S80PFG8 võtke meiega ühendust.
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71V67703S80PFG8 Iseärasused
71V67703S80PFG8 is produced by IDT, Integrated Device Technology Inc, belongs to Mälu.
71V67703S80PFG8 Toote üksikasjad
:
71V67703S80PFG8 – Mälu disainitud puhvervõimendid ja toodetud IDT, Integrated Device Technology Inc.
71V67703S80PFG8, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 71V67703S80PFG8 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 71V67703S80PFG8 (PDF), hind 71V67703S80PFG8, Pinout 71V67703S80PFG8, manuaal 71V67703S80PFG8 Ja 71V67703S80PFG8 asenduslahendus.
71V67703S80PFG8, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 71V67703S80PFG8 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 71V67703S80PFG8 (PDF), hind 71V67703S80PFG8, Pinout 71V67703S80PFG8, manuaal 71V67703S80PFG8 Ja 71V67703S80PFG8 asenduslahendus.
71V67703S80PFG8 FAQ
:
1. What is the maximum operating temperature of the 71V67703S80PFG8 semiconductor?
The maximum operating temperature of the 71V67703S80PFG8 semiconductor is 125°C.
2. What is the typical input voltage range for this semiconductor?
The typical input voltage range for the 71V67703S80PFG8 semiconductor is 4.5V to 5.5V.
3. Can you provide the typical output current capability of the 71V67703S80PFG8 semiconductor?
The typical output current capability of the 71V67703S80PFG8 semiconductor is 3A.
4. What are the recommended storage conditions for this semiconductor?
It is recommended to store the 71V67703S80PFG8 semiconductor at a temperature range of -65°C to 150°C.
5. Does the 71V67703S80PFG8 semiconductor have built-in overcurrent protection?
Yes, the 71V67703S80PFG8 semiconductor features built-in overcurrent protection.
6. What is the typical quiescent current consumption of the 71V67703S80PFG8 semiconductor?
The typical quiescent current consumption of the 71V67703S80PFG8 semiconductor is 40µA.
7. Can you explain the thermal shutdown feature of the 71V67703S80PFG8 semiconductor?
The thermal shutdown feature of the 71V67703S80PFG8 semiconductor protects the device from overheating by shutting it down when the junction temperature exceeds the specified limit.
8. What is the typical dropout voltage of the 71V67703S80PFG8 semiconductor?
The typical dropout voltage of the 71V67703S80PFG8 semiconductor is 300mV at 3A load current.
9. Are there any specific layout considerations for using the 71V67703S80PFG8 semiconductor in a circuit design?
It is recommended to follow the layout guidelines provided in the datasheet to ensure proper performance and reliability of the 71V67703S80PFG8 semiconductor.
10. Can you provide information on the ESD (electrostatic discharge) protection of the 71V67703S80PFG8 semiconductor?
The 71V67703S80PFG8 semiconductor is designed with robust ESD protection to ensure its resilience to electrostatic discharge events during handling and operation.
The maximum operating temperature of the 71V67703S80PFG8 semiconductor is 125°C.
2. What is the typical input voltage range for this semiconductor?
The typical input voltage range for the 71V67703S80PFG8 semiconductor is 4.5V to 5.5V.
3. Can you provide the typical output current capability of the 71V67703S80PFG8 semiconductor?
The typical output current capability of the 71V67703S80PFG8 semiconductor is 3A.
4. What are the recommended storage conditions for this semiconductor?
It is recommended to store the 71V67703S80PFG8 semiconductor at a temperature range of -65°C to 150°C.
5. Does the 71V67703S80PFG8 semiconductor have built-in overcurrent protection?
Yes, the 71V67703S80PFG8 semiconductor features built-in overcurrent protection.
6. What is the typical quiescent current consumption of the 71V67703S80PFG8 semiconductor?
The typical quiescent current consumption of the 71V67703S80PFG8 semiconductor is 40µA.
7. Can you explain the thermal shutdown feature of the 71V67703S80PFG8 semiconductor?
The thermal shutdown feature of the 71V67703S80PFG8 semiconductor protects the device from overheating by shutting it down when the junction temperature exceeds the specified limit.
8. What is the typical dropout voltage of the 71V67703S80PFG8 semiconductor?
The typical dropout voltage of the 71V67703S80PFG8 semiconductor is 300mV at 3A load current.
9. Are there any specific layout considerations for using the 71V67703S80PFG8 semiconductor in a circuit design?
It is recommended to follow the layout guidelines provided in the datasheet to ensure proper performance and reliability of the 71V67703S80PFG8 semiconductor.
10. Can you provide information on the ESD (electrostatic discharge) protection of the 71V67703S80PFG8 semiconductor?
The 71V67703S80PFG8 semiconductor is designed with robust ESD protection to ensure its resilience to electrostatic discharge events during handling and operation.
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