70V659S10BFG8 IDT, Integrated Device Technology Inc IC SRAM 4.5MBIT 10NS 208CABGA
Integraallülitused (IC-d)
Tootja number:
70V659S10BFG8
Tootekategooria:
Kirjeldus:
IC SRAM 4.5MBIT 10NS 208CABGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
70V659S10BFG8 Andmetabelid(PDF)
Juurdepääsu aeg :
10ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
4.5Mb (128K x 36)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
208-LFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
3.15 V ~ 3.45 V
seeria :
-
Tarnija seadmepakett :
208-FPBGA (15x15)
Tehnoloogia :
SRAM - Dual Port, Asynchronous
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
10ns
Laos
39,289
Ühiku hind:
Võtke meiega ühendust Pakkumine
70V659S10BFG8 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 70V659S10BFG8 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 70V659S10BFG8. Parima hinna saamiseks saidil 70V659S10BFG8 võtke meiega ühendust.
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70V659S10BFG8 Iseärasused
70V659S10BFG8 is produced by IDT, Integrated Device Technology Inc, belongs to Mälu.
70V659S10BFG8 Toote üksikasjad
:
70V659S10BFG8 – Mälu disainitud puhvervõimendid ja toodetud IDT, Integrated Device Technology Inc.
70V659S10BFG8, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70V659S10BFG8 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70V659S10BFG8 (PDF), hind 70V659S10BFG8, Pinout 70V659S10BFG8, manuaal 70V659S10BFG8 Ja 70V659S10BFG8 asenduslahendus.
70V659S10BFG8, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70V659S10BFG8 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70V659S10BFG8 (PDF), hind 70V659S10BFG8, Pinout 70V659S10BFG8, manuaal 70V659S10BFG8 Ja 70V659S10BFG8 asenduslahendus.
70V659S10BFG8 FAQ
:
1. What is the maximum operating voltage of the 70V659S10BFG8 discrete semiconductor?
The maximum operating voltage of the 70V659S10BFG8 discrete semiconductor is 70V.
2. What type of semiconductor material is used in the 70V659S10BFG8?
The 70V659S10BFG8 uses silicon as the semiconductor material.
3. What is the typical power dissipation of the 70V659S10BFG8?
The typical power dissipation of the 70V659S10BFG8 is 1.5W.
4. Can the 70V659S10BFG8 be used for high-frequency applications?
Yes, the 70V659S10BFG8 can be used for high-frequency applications due to its design and characteristics.
5. What is the maximum junction temperature of the 70V659S10BFG8?
The maximum junction temperature of the 70V659S10BFG8 is 150°C.
6. Does the 70V659S10BFG8 require any special heat sinking or thermal management?
Yes, the 70V659S10BFG8 may require special heat sinking or thermal management depending on the application and operating conditions.
7. What are the typical applications for the 70V659S10BFG8 discrete semiconductor?
Typical applications for the 70V659S10BFG8 include power management, voltage regulation, and switching circuits.
8. Is the 70V659S10BFG8 suitable for automotive or industrial applications?
Yes, the 70V659S10BFG8 is suitable for both automotive and industrial applications due to its robust design and performance.
9. What are the key electrical characteristics of the 70V659S10BFG8?
Key electrical characteristics of the 70V659S10BFG8 include low on-resistance, high breakdown voltage, and fast switching speed.
10. Are there any recommended test procedures for evaluating the performance of the 70V659S10BFG8?
Yes, there are recommended test procedures provided in the datasheet for evaluating the performance of the 70V659S10BFG8 under various operating conditions.
The maximum operating voltage of the 70V659S10BFG8 discrete semiconductor is 70V.
2. What type of semiconductor material is used in the 70V659S10BFG8?
The 70V659S10BFG8 uses silicon as the semiconductor material.
3. What is the typical power dissipation of the 70V659S10BFG8?
The typical power dissipation of the 70V659S10BFG8 is 1.5W.
4. Can the 70V659S10BFG8 be used for high-frequency applications?
Yes, the 70V659S10BFG8 can be used for high-frequency applications due to its design and characteristics.
5. What is the maximum junction temperature of the 70V659S10BFG8?
The maximum junction temperature of the 70V659S10BFG8 is 150°C.
6. Does the 70V659S10BFG8 require any special heat sinking or thermal management?
Yes, the 70V659S10BFG8 may require special heat sinking or thermal management depending on the application and operating conditions.
7. What are the typical applications for the 70V659S10BFG8 discrete semiconductor?
Typical applications for the 70V659S10BFG8 include power management, voltage regulation, and switching circuits.
8. Is the 70V659S10BFG8 suitable for automotive or industrial applications?
Yes, the 70V659S10BFG8 is suitable for both automotive and industrial applications due to its robust design and performance.
9. What are the key electrical characteristics of the 70V659S10BFG8?
Key electrical characteristics of the 70V659S10BFG8 include low on-resistance, high breakdown voltage, and fast switching speed.
10. Are there any recommended test procedures for evaluating the performance of the 70V659S10BFG8?
Yes, there are recommended test procedures provided in the datasheet for evaluating the performance of the 70V659S10BFG8 under various operating conditions.
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