70V3389S6BF8 IDT, Integrated Device Technology Inc IC SRAM 1.125MBIT 6NS 208CABGA
Integraallülitused (IC-d)
Tootja number:
70V3389S6BF8
Tootekategooria:
Kirjeldus:
IC SRAM 1.125MBIT 6NS 208CABGA
RoHs olek:
Andmetabelid:
70V3389S6BF8 Andmetabelid(PDF)
Juurdepääsu aeg :
6ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
1.125Mb (64K x 18)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
208-LFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
3.15 V ~ 3.45 V
seeria :
-
Tarnija seadmepakett :
208-CABGA (15x15)
Tehnoloogia :
SRAM - Dual Port, Synchronous
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
29,553
Ühiku hind:
Võtke meiega ühendust Pakkumine
70V3389S6BF8 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 70V3389S6BF8 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 70V3389S6BF8. Parima hinna saamiseks saidil 70V3389S6BF8 võtke meiega ühendust.
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70V3389S6BF8 Iseärasused
70V3389S6BF8 is produced by IDT, Integrated Device Technology Inc, belongs to Mälu.
70V3389S6BF8 Toote üksikasjad
:
70V3389S6BF8 – Mälu disainitud puhvervõimendid ja toodetud IDT, Integrated Device Technology Inc.
70V3389S6BF8, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70V3389S6BF8 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70V3389S6BF8 (PDF), hind 70V3389S6BF8, Pinout 70V3389S6BF8, manuaal 70V3389S6BF8 Ja 70V3389S6BF8 asenduslahendus.
70V3389S6BF8, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70V3389S6BF8 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70V3389S6BF8 (PDF), hind 70V3389S6BF8, Pinout 70V3389S6BF8, manuaal 70V3389S6BF8 Ja 70V3389S6BF8 asenduslahendus.
70V3389S6BF8 FAQ
:
1. What is the maximum operating voltage of the 70V3389S6BF8 discrete semiconductor?
The maximum operating voltage of the 70V3389S6BF8 discrete semiconductor is 70V.
2. What type of semiconductor device is the 70V3389S6BF8?
The 70V3389S6BF8 is a high-voltage, high-speed N-channel MOSFET.
3. What is the typical drain-source on-resistance of the 70V3389S6BF8 at room temperature?
The typical drain-source on-resistance of the 70V3389S6BF8 at room temperature is 6mΩ.
4. Can the 70V3389S6BF8 handle high-frequency switching applications?
Yes, the 70V3389S6BF8 is designed to handle high-frequency switching applications.
5. What is the maximum continuous drain current rating of the 70V3389S6BF8?
The maximum continuous drain current rating of the 70V3389S6BF8 is 120A.
6. Does the 70V3389S6BF8 have built-in protection features?
Yes, the 70V3389S6BF8 includes built-in overcurrent protection and thermal shutdown features.
7. What is the typical gate charge of the 70V3389S6BF8 at a specified voltage and temperature?
The typical gate charge of the 70V3389S6BF8 is specified in the datasheet at a specific voltage and temperature.
8. Is the 70V3389S6BF8 suitable for automotive or industrial applications?
Yes, the 70V3389S6BF8 is suitable for both automotive and industrial applications.
9. What are the recommended operating temperature range and storage temperature range for the 70V3389S6BF8?
The recommended operating temperature range for the 70V3389S6BF8 is specified in the datasheet, as well as the storage temperature range.
10. Can the 70V3389S6BF8 be used in parallel to increase current-handling capability?
Yes, the 70V3389S6BF8 can be used in parallel to increase current-handling capability, with proper attention to layout and thermal considerations.
The maximum operating voltage of the 70V3389S6BF8 discrete semiconductor is 70V.
2. What type of semiconductor device is the 70V3389S6BF8?
The 70V3389S6BF8 is a high-voltage, high-speed N-channel MOSFET.
3. What is the typical drain-source on-resistance of the 70V3389S6BF8 at room temperature?
The typical drain-source on-resistance of the 70V3389S6BF8 at room temperature is 6mΩ.
4. Can the 70V3389S6BF8 handle high-frequency switching applications?
Yes, the 70V3389S6BF8 is designed to handle high-frequency switching applications.
5. What is the maximum continuous drain current rating of the 70V3389S6BF8?
The maximum continuous drain current rating of the 70V3389S6BF8 is 120A.
6. Does the 70V3389S6BF8 have built-in protection features?
Yes, the 70V3389S6BF8 includes built-in overcurrent protection and thermal shutdown features.
7. What is the typical gate charge of the 70V3389S6BF8 at a specified voltage and temperature?
The typical gate charge of the 70V3389S6BF8 is specified in the datasheet at a specific voltage and temperature.
8. Is the 70V3389S6BF8 suitable for automotive or industrial applications?
Yes, the 70V3389S6BF8 is suitable for both automotive and industrial applications.
9. What are the recommended operating temperature range and storage temperature range for the 70V3389S6BF8?
The recommended operating temperature range for the 70V3389S6BF8 is specified in the datasheet, as well as the storage temperature range.
10. Can the 70V3389S6BF8 be used in parallel to increase current-handling capability?
Yes, the 70V3389S6BF8 can be used in parallel to increase current-handling capability, with proper attention to layout and thermal considerations.
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