70T659S12DR IDT, Integrated Device Technology Inc IC SRAM 4.5MBIT 12NS 208QFP

Integraallülitused (IC-d)     
Tootja number:
70T659S12DR
Tootekategooria:
Kirjeldus:
IC SRAM 4.5MBIT 12NS 208QFP
RoHs olek:
Juurdepääsu aeg :
12ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
4.5Mb (128K x 36)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Last Time Buy
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
208-BFQFP
Pakendamine :
Tray
Pinge – toide :
2.4 V ~ 2.6 V
seeria :
-
Tarnija seadmepakett :
208-PQFP (28x28)
Tehnoloogia :
SRAM - Dual Port, Asynchronous
Töötemperatuur :
0°C ~ 70°C (TA)
Tsükli aja kirjutamine – sõna, leht :
12ns
Laos
53,147
Ühiku hind:
Võtke meiega ühendust Pakkumine
 

70T659S12DR Konkurentsivõimelised hinnad

ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 70T659S12DR konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 70T659S12DR. Parima hinna saamiseks saidil 70T659S12DR võtke meiega ühendust. Hinnapakkumise saamiseks klõpsake
 

70T659S12DR Iseärasused

70T659S12DR is produced by IDT, Integrated Device Technology Inc, belongs to Mälu.
  

70T659S12DR Toote üksikasjad

:
70T659S12DR – Mälu disainitud puhvervõimendid ja toodetud IDT, Integrated Device Technology Inc.
70T659S12DR, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70T659S12DR on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70T659S12DR (PDF), hind 70T659S12DR, Pinout 70T659S12DR, manuaal 70T659S12DR Ja 70T659S12DR asenduslahendus.
  

70T659S12DR FAQ

:
1. What is the maximum operating temperature for the 70T659S12DR semiconductor?
The maximum operating temperature for the 70T659S12DR semiconductor is 125°C.

2. What is the typical voltage rating for the 70T659S12DR semiconductor?
The typical voltage rating for the 70T659S12DR semiconductor is 600V.

3. Can the 70T659S12DR semiconductor handle high-frequency applications?
Yes, the 70T659S12DR semiconductor is designed to handle high-frequency applications effectively.

4. What is the recommended storage temperature for the 70T659S12DR semiconductor?
The recommended storage temperature for the 70T659S12DR semiconductor is -55°C to 150°C.

5. Does the 70T659S12DR semiconductor require any special heat dissipation measures?
Yes, it is recommended to use proper heat sinks and thermal management techniques for efficient heat dissipation with the 70T659S12DR semiconductor.

6. Is the 70T659S12DR semiconductor suitable for automotive applications?
Yes, the 70T659S12DR semiconductor is suitable for automotive applications and complies with relevant industry standards.

7. What are the typical switching frequencies supported by the 70T659S12DR semiconductor?
The 70T659S12DR semiconductor supports typical switching frequencies ranging from 50kHz to 500kHz.

8. Can the 70T659S12DR semiconductor be used in parallel configurations for higher power applications?
Yes, the 70T659S12DR semiconductor can be used in parallel configurations to achieve higher power levels effectively.

9. What protection features are integrated into the 70T659S12DR semiconductor?
The 70T659S12DR semiconductor integrates overcurrent protection, overvoltage protection, undervoltage lockout, and thermal shutdown features for enhanced reliability.

10. What are the recommended PCB layout guidelines for the 70T659S12DR semiconductor?
It is recommended to follow the manufacturer's guidelines for PCB layout, including proper grounding, component placement, and thermal management considerations for optimal performance of the 70T659S12DR semiconductor.
  

70T659S12DR Seotud märksõnad

:
70T659S12DR Hind
70T659S12DR Maalimine
70T659S12DR Tihvtide pinge

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