70T633S10BFI8 IDT, Integrated Device Technology Inc IC SRAM 9MBIT 10NS 208CABGA
Integraallülitused (IC-d)
Tootja number:
70T633S10BFI8
Tootekategooria:
Kirjeldus:
IC SRAM 9MBIT 10NS 208CABGA
RoHs olek:
Andmetabelid:
70T633S10BFI8 Andmetabelid(PDF)
Juurdepääsu aeg :
10ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
9Mb (512K x 18)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
208-LFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
2.4 V ~ 2.6 V
seeria :
-
Tarnija seadmepakett :
208-CABGA (15x15)
Tehnoloogia :
SRAM - Dual Port, Asynchronous
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
10ns
Laos
43,137
Ühiku hind:
Võtke meiega ühendust Pakkumine
70T633S10BFI8 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 70T633S10BFI8 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 70T633S10BFI8. Parima hinna saamiseks saidil 70T633S10BFI8 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
70T633S10BFI8 Iseärasused
70T633S10BFI8 is produced by IDT, Integrated Device Technology Inc, belongs to Mälu.
70T633S10BFI8 Toote üksikasjad
:
70T633S10BFI8 – Mälu disainitud puhvervõimendid ja toodetud IDT, Integrated Device Technology Inc.
70T633S10BFI8, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70T633S10BFI8 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70T633S10BFI8 (PDF), hind 70T633S10BFI8, Pinout 70T633S10BFI8, manuaal 70T633S10BFI8 Ja 70T633S10BFI8 asenduslahendus.
70T633S10BFI8, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70T633S10BFI8 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70T633S10BFI8 (PDF), hind 70T633S10BFI8, Pinout 70T633S10BFI8, manuaal 70T633S10BFI8 Ja 70T633S10BFI8 asenduslahendus.
70T633S10BFI8 FAQ
:
1. What is the maximum operating temperature for the 70T633S10BFI8 semiconductor?
The maximum operating temperature for the 70T633S10BFI8 semiconductor is 150°C.
2. What is the typical forward voltage drop for the 70T633S10BFI8 diode?
The typical forward voltage drop for the 70T633S10BFI8 diode is 0.7V.
3. Can the 70T633S10BFI8 handle high-frequency applications?
Yes, the 70T633S10BFI8 is suitable for high-frequency applications due to its low capacitance and fast switching characteristics.
4. What is the maximum continuous drain current for the 70T633S10BFI8 MOSFET?
The maximum continuous drain current for the 70T633S10BFI8 MOSFET is 70A.
5. Does the 70T633S10BFI8 require a heat sink for normal operation?
It is recommended to use a heat sink for the 70T633S10BFI8 when operating at high currents or in elevated ambient temperatures.
6. What is the typical gate threshold voltage for the 70T633S10BFI8 MOSFET?
The typical gate threshold voltage for the 70T633S10BFI8 MOSFET is 2.5V.
7. Is the 70T633S10BFI8 suitable for automotive applications?
Yes, the 70T633S10BFI8 is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
8. What is the maximum reverse voltage for the 70T633S10BFI8 Schottky diode?
The maximum reverse voltage for the 70T633S10BFI8 Schottky diode is 100V.
9. Can the 70T633S10BFI8 be used in power factor correction circuits?
Yes, the 70T633S10BFI8 is well-suited for power factor correction circuits due to its fast recovery time and low conduction losses.
10. What is the typical on-resistance for the 70T633S10BFI8 power MOSFET?
The typical on-resistance for the 70T633S10BFI8 power MOSFET is 10mΩ.
The maximum operating temperature for the 70T633S10BFI8 semiconductor is 150°C.
2. What is the typical forward voltage drop for the 70T633S10BFI8 diode?
The typical forward voltage drop for the 70T633S10BFI8 diode is 0.7V.
3. Can the 70T633S10BFI8 handle high-frequency applications?
Yes, the 70T633S10BFI8 is suitable for high-frequency applications due to its low capacitance and fast switching characteristics.
4. What is the maximum continuous drain current for the 70T633S10BFI8 MOSFET?
The maximum continuous drain current for the 70T633S10BFI8 MOSFET is 70A.
5. Does the 70T633S10BFI8 require a heat sink for normal operation?
It is recommended to use a heat sink for the 70T633S10BFI8 when operating at high currents or in elevated ambient temperatures.
6. What is the typical gate threshold voltage for the 70T633S10BFI8 MOSFET?
The typical gate threshold voltage for the 70T633S10BFI8 MOSFET is 2.5V.
7. Is the 70T633S10BFI8 suitable for automotive applications?
Yes, the 70T633S10BFI8 is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
8. What is the maximum reverse voltage for the 70T633S10BFI8 Schottky diode?
The maximum reverse voltage for the 70T633S10BFI8 Schottky diode is 100V.
9. Can the 70T633S10BFI8 be used in power factor correction circuits?
Yes, the 70T633S10BFI8 is well-suited for power factor correction circuits due to its fast recovery time and low conduction losses.
10. What is the typical on-resistance for the 70T633S10BFI8 power MOSFET?
The typical on-resistance for the 70T633S10BFI8 power MOSFET is 10mΩ.
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