70T633S10BFI IDT, Integrated Device Technology Inc IC SRAM 9MBIT 10NS 208CABGA
Integraallülitused (IC-d)
Tootja number:
70T633S10BFI
Tootekategooria:
Kirjeldus:
IC SRAM 9MBIT 10NS 208CABGA
RoHs olek:
Andmetabelid:
70T633S10BFI Andmetabelid(PDF)
Juurdepääsu aeg :
10ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
9Mb (512K x 18)
Mälu tüüp :
Volatile
Mälu vorming :
SRAM
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
208-LFBGA
Pakendamine :
Tray
Pinge – toide :
2.4 V ~ 2.6 V
seeria :
-
Tarnija seadmepakett :
208-CABGA (15x15)
Tehnoloogia :
SRAM - Dual Port, Asynchronous
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
10ns
Laos
31,727
Ühiku hind:
Võtke meiega ühendust Pakkumine
70T633S10BFI Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele 70T633S10BFI konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc 70T633S10BFI. Parima hinna saamiseks saidil 70T633S10BFI võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
70T633S10BFI Iseärasused
70T633S10BFI is produced by IDT, Integrated Device Technology Inc, belongs to Mälu.
70T633S10BFI Toote üksikasjad
:
70T633S10BFI – Mälu disainitud puhvervõimendid ja toodetud IDT, Integrated Device Technology Inc.
70T633S10BFI, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70T633S10BFI on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70T633S10BFI (PDF), hind 70T633S10BFI, Pinout 70T633S10BFI, manuaal 70T633S10BFI Ja 70T633S10BFI asenduslahendus.
70T633S10BFI, mida pakub IDT, Integrated Device Technology Inc, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC 70T633S10BFI on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis 70T633S10BFI (PDF), hind 70T633S10BFI, Pinout 70T633S10BFI, manuaal 70T633S10BFI Ja 70T633S10BFI asenduslahendus.
70T633S10BFI FAQ
:
1. What is the maximum operating temperature for the 70T633S10BFI discrete semiconductor?
The maximum operating temperature for the 70T633S10BFI discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the 70T633S10BFI diode?
The typical forward voltage drop for the 70T633S10BFI diode is 0.7V.
3. Can the 70T633S10BFI handle high-frequency applications?
Yes, the 70T633S10BFI is suitable for high-frequency applications due to its fast switching characteristics.
4. What is the maximum continuous current rating for the 70T633S10BFI transistor?
The maximum continuous current rating for the 70T633S10BFI transistor is 10A.
5. Is the 70T633S10BFI suitable for automotive applications?
Yes, the 70T633S10BFI is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
6. Does the 70T633S10BFI require a heat sink for operation?
It is recommended to use a heat sink for the 70T633S10BFI when operating at high currents or in elevated ambient temperatures.
7. What is the typical reverse recovery time for the 70T633S10BFI diode?
The typical reverse recovery time for the 70T633S10BFI diode is 35ns.
8. Can the 70T633S10BFI be used in power supply applications?
Yes, the 70T633S10BFI is suitable for power supply and power management applications.
9. What is the maximum drain-source voltage for the 70T633S10BFI MOSFET?
The maximum drain-source voltage for the 70T633S10BFI MOSFET is 100V.
10. Does the 70T633S10BFI have built-in ESD protection?
Yes, the 70T633S10BFI features built-in ESD protection to enhance reliability in various applications.
The maximum operating temperature for the 70T633S10BFI discrete semiconductor is 150°C.
2. What is the typical forward voltage drop for the 70T633S10BFI diode?
The typical forward voltage drop for the 70T633S10BFI diode is 0.7V.
3. Can the 70T633S10BFI handle high-frequency applications?
Yes, the 70T633S10BFI is suitable for high-frequency applications due to its fast switching characteristics.
4. What is the maximum continuous current rating for the 70T633S10BFI transistor?
The maximum continuous current rating for the 70T633S10BFI transistor is 10A.
5. Is the 70T633S10BFI suitable for automotive applications?
Yes, the 70T633S10BFI is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
6. Does the 70T633S10BFI require a heat sink for operation?
It is recommended to use a heat sink for the 70T633S10BFI when operating at high currents or in elevated ambient temperatures.
7. What is the typical reverse recovery time for the 70T633S10BFI diode?
The typical reverse recovery time for the 70T633S10BFI diode is 35ns.
8. Can the 70T633S10BFI be used in power supply applications?
Yes, the 70T633S10BFI is suitable for power supply and power management applications.
9. What is the maximum drain-source voltage for the 70T633S10BFI MOSFET?
The maximum drain-source voltage for the 70T633S10BFI MOSFET is 100V.
10. Does the 70T633S10BFI have built-in ESD protection?
Yes, the 70T633S10BFI features built-in ESD protection to enhance reliability in various applications.
70T633S10BFI Seotud märksõnad
:
70T633S10BFI Hind
70T633S10BFI Maalimine
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