DGD2117S8-13 Diodes Incorporated IC GATE DRVR HIGH SIDE 8SO
Integraallülitused (IC-d)
Tootja number:
DGD2117S8-13
Tootja:
Tootekategooria:
Kirjeldus:
IC GATE DRVR HIGH SIDE 8SO
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
DGD2117S8-13 Andmetabelid(PDF)
juhitud konfiguratsioon :
High-Side
Juhtide arv :
1
Kanali tüüp :
Single
Kõrge külgpinge – max (bootstrap) :
600V
Loogikapinge - VIL, VIH :
6V, 9.5V
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
8-SOIC (0.154", 3.90mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
10 V ~ 20 V
Praegune – tippväljund (allikas, valamu) :
290mA, 600mA
seeria :
-
Sisendtüüp :
Non-Inverting
Tarnija seadmepakett :
8-SO
Töötemperatuur :
-40°C ~ 150°C (TJ)
Tõusu/languse aeg (tüüp) :
75ns, 35ns
Värava tüüp :
IGBT, N-Channel MOSFET
Laos
44,947
Ühiku hind:
Võtke meiega ühendust Pakkumine
DGD2117S8-13 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele DGD2117S8-13 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc DGD2117S8-13. Parima hinna saamiseks saidil DGD2117S8-13 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
DGD2117S8-13 Iseärasused
DGD2117S8-13 is produced by Diodes Incorporated, belongs to PMIC – värava draiverid.
DGD2117S8-13 Toote üksikasjad
:
DGD2117S8-13 – PMIC – värava draiverid disainitud puhvervõimendid ja toodetud Diodes Incorporated.
DGD2117S8-13, mida pakub Diodes Incorporated, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC DGD2117S8-13 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis DGD2117S8-13 (PDF), hind DGD2117S8-13, Pinout DGD2117S8-13, manuaal DGD2117S8-13 Ja DGD2117S8-13 asenduslahendus.
DGD2117S8-13, mida pakub Diodes Incorporated, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC DGD2117S8-13 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis DGD2117S8-13 (PDF), hind DGD2117S8-13, Pinout DGD2117S8-13, manuaal DGD2117S8-13 Ja DGD2117S8-13 asenduslahendus.
DGD2117S8-13 FAQ
:
1. What is the maximum drain-source voltage for DGD2117S8-13?
The maximum drain-source voltage for DGD2117S8-13 is 100V.
2. What is the continuous drain current rating for DGD2117S8-13?
The continuous drain current rating for DGD2117S8-13 is 30A.
3. What is the on-resistance for DGD2117S8-13 at a specific gate-source voltage?
The on-resistance for DGD2117S8-13 at a gate-source voltage of 10V is typically 8mΩ.
4. What is the gate threshold voltage for DGD2117S8-13?
The gate threshold voltage for DGD2117S8-13 typically ranges from 2V to 4V.
5. What is the maximum junction temperature for DGD2117S8-13?
The maximum junction temperature for DGD2117S8-13 is 175°C.
6. What is the input capacitance of DGD2117S8-13?
The input capacitance of DGD2117S8-13 is typically 5200pF.
7. What is the total gate charge for DGD2117S8-13 at a specific gate-source voltage?
The total gate charge for DGD2117S8-13 at a gate-source voltage of 10V is typically 35nC.
8. What is the reverse transfer capacitance for DGD2117S8-13?
The reverse transfer capacitance for DGD2117S8-13 is typically 300pF.
9. What is the turn-on delay time for DGD2117S8-13?
The turn-on delay time for DGD2117S8-13 is typically 12ns.
10. What is the storage time for DGD2117S8-13?
The storage time for DGD2117S8-13 is typically 40ns.
The maximum drain-source voltage for DGD2117S8-13 is 100V.
2. What is the continuous drain current rating for DGD2117S8-13?
The continuous drain current rating for DGD2117S8-13 is 30A.
3. What is the on-resistance for DGD2117S8-13 at a specific gate-source voltage?
The on-resistance for DGD2117S8-13 at a gate-source voltage of 10V is typically 8mΩ.
4. What is the gate threshold voltage for DGD2117S8-13?
The gate threshold voltage for DGD2117S8-13 typically ranges from 2V to 4V.
5. What is the maximum junction temperature for DGD2117S8-13?
The maximum junction temperature for DGD2117S8-13 is 175°C.
6. What is the input capacitance of DGD2117S8-13?
The input capacitance of DGD2117S8-13 is typically 5200pF.
7. What is the total gate charge for DGD2117S8-13 at a specific gate-source voltage?
The total gate charge for DGD2117S8-13 at a gate-source voltage of 10V is typically 35nC.
8. What is the reverse transfer capacitance for DGD2117S8-13?
The reverse transfer capacitance for DGD2117S8-13 is typically 300pF.
9. What is the turn-on delay time for DGD2117S8-13?
The turn-on delay time for DGD2117S8-13 is typically 12ns.
10. What is the storage time for DGD2117S8-13?
The storage time for DGD2117S8-13 is typically 40ns.
DGD2117S8-13 Seotud märksõnad
:
DGD2117S8-13 Hind
DGD2117S8-13 Maalimine
DGD2117S8-13 Tihvtide pinge
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