S34MS04G200BHI003 Cypress Semiconductor Corp IC FLASH 4GBIT 45NS 63BGA
Integraallülitused (IC-d)
Tootja number:
S34MS04G200BHI003
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 4GBIT 45NS 63BGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
S34MS04G200BHI003 Andmetabelid(PDF)
Juurdepääsu aeg :
45ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
4Gb (512M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
1.7 V ~ 1.95 V
seeria :
MS-2
Tarnija seadmepakett :
63-BGA (11x9)
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
45ns
Laos
51,130
Ühiku hind:
Võtke meiega ühendust Pakkumine
S34MS04G200BHI003 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele S34MS04G200BHI003 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc S34MS04G200BHI003. Parima hinna saamiseks saidil S34MS04G200BHI003 võtke meiega ühendust.
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S34MS04G200BHI003 Iseärasused
S34MS04G200BHI003 is produced by Cypress Semiconductor Corp, belongs to Mälu.
S34MS04G200BHI003 Toote üksikasjad
:
S34MS04G200BHI003 – Mälu disainitud puhvervõimendid ja toodetud Cypress Semiconductor Corp.
S34MS04G200BHI003, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S34MS04G200BHI003 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S34MS04G200BHI003 (PDF), hind S34MS04G200BHI003, Pinout S34MS04G200BHI003, manuaal S34MS04G200BHI003 Ja S34MS04G200BHI003 asenduslahendus.
S34MS04G200BHI003, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S34MS04G200BHI003 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S34MS04G200BHI003 (PDF), hind S34MS04G200BHI003, Pinout S34MS04G200BHI003, manuaal S34MS04G200BHI003 Ja S34MS04G200BHI003 asenduslahendus.
S34MS04G200BHI003 FAQ
:
1. What is the maximum capacity of the S34MS04G200BHI003 NAND flash memory?
The S34MS04G200BHI003 NAND flash memory has a maximum capacity of 4 gigabits.
2. What is the interface voltage for the S34MS04G200BHI003 NAND flash memory?
The interface voltage for the S34MS04G200BHI003 NAND flash memory is 1.8V.
3. What is the operating temperature range of the S34MS04G200BHI003 NAND flash memory?
The operating temperature range of the S34MS04G200BHI003 NAND flash memory is -40°C to 85°C.
4. What are the typical read and program times for the S34MS04G200BHI003 NAND flash memory?
The typical read time for the S34MS04G200BHI003 NAND flash memory is 25 microseconds, and the typical program time is 2000 microseconds.
5. What is the erase block size of the S34MS04G200BHI003 NAND flash memory?
The erase block size of the S34MS04G200BHI003 NAND flash memory is 128 kilobytes.
6. Does the S34MS04G200BHI003 NAND flash memory support random data access?
Yes, the S34MS04G200BHI003 NAND flash memory supports random data access.
7. What is the maximum clock frequency supported by the S34MS04G200BHI003 NAND flash memory?
The maximum clock frequency supported by the S34MS04G200BHI003 NAND flash memory is 50 MHz.
8. What is the package type of the S34MS04G200BHI003 NAND flash memory?
The package type of the S34MS04G200BHI003 NAND flash memory is a 63-ball BGA.
9. Can the S34MS04G200BHI003 NAND flash memory be operated in multiple plane mode?
Yes, the S34MS04G200BHI003 NAND flash memory can be operated in multiple plane mode.
10. What is the data retention period of the S34MS04G200BHI003 NAND flash memory?
The data retention period of the S34MS04G200BHI003 NAND flash memory is 10 years.
The S34MS04G200BHI003 NAND flash memory has a maximum capacity of 4 gigabits.
2. What is the interface voltage for the S34MS04G200BHI003 NAND flash memory?
The interface voltage for the S34MS04G200BHI003 NAND flash memory is 1.8V.
3. What is the operating temperature range of the S34MS04G200BHI003 NAND flash memory?
The operating temperature range of the S34MS04G200BHI003 NAND flash memory is -40°C to 85°C.
4. What are the typical read and program times for the S34MS04G200BHI003 NAND flash memory?
The typical read time for the S34MS04G200BHI003 NAND flash memory is 25 microseconds, and the typical program time is 2000 microseconds.
5. What is the erase block size of the S34MS04G200BHI003 NAND flash memory?
The erase block size of the S34MS04G200BHI003 NAND flash memory is 128 kilobytes.
6. Does the S34MS04G200BHI003 NAND flash memory support random data access?
Yes, the S34MS04G200BHI003 NAND flash memory supports random data access.
7. What is the maximum clock frequency supported by the S34MS04G200BHI003 NAND flash memory?
The maximum clock frequency supported by the S34MS04G200BHI003 NAND flash memory is 50 MHz.
8. What is the package type of the S34MS04G200BHI003 NAND flash memory?
The package type of the S34MS04G200BHI003 NAND flash memory is a 63-ball BGA.
9. Can the S34MS04G200BHI003 NAND flash memory be operated in multiple plane mode?
Yes, the S34MS04G200BHI003 NAND flash memory can be operated in multiple plane mode.
10. What is the data retention period of the S34MS04G200BHI003 NAND flash memory?
The data retention period of the S34MS04G200BHI003 NAND flash memory is 10 years.
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