S34ML08G101BHA003 Cypress Semiconductor Corp IC FLASH 8GBIT 25NS 63BGA
Integraallülitused (IC-d)
Tootja number:
S34ML08G101BHA003
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 8GBIT 25NS 63BGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
S34ML08G101BHA003 Andmetabelid(PDF)
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
8Gb (1G x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
63-VFBGA
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
ML-1
Tarnija seadmepakett :
63-BGA (11x9)
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
25ns
Laos
32,012
Ühiku hind:
Võtke meiega ühendust Pakkumine
S34ML08G101BHA003 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele S34ML08G101BHA003 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc S34ML08G101BHA003. Parima hinna saamiseks saidil S34ML08G101BHA003 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
S34ML08G101BHA003 Iseärasused
S34ML08G101BHA003 is produced by Cypress Semiconductor Corp, belongs to Mälu.
S34ML08G101BHA003 Toote üksikasjad
:
S34ML08G101BHA003 – Mälu disainitud puhvervõimendid ja toodetud Cypress Semiconductor Corp.
S34ML08G101BHA003, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S34ML08G101BHA003 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S34ML08G101BHA003 (PDF), hind S34ML08G101BHA003, Pinout S34ML08G101BHA003, manuaal S34ML08G101BHA003 Ja S34ML08G101BHA003 asenduslahendus.
S34ML08G101BHA003, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S34ML08G101BHA003 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S34ML08G101BHA003 (PDF), hind S34ML08G101BHA003, Pinout S34ML08G101BHA003, manuaal S34ML08G101BHA003 Ja S34ML08G101BHA003 asenduslahendus.
S34ML08G101BHA003 FAQ
:
1. What is the maximum capacity of the S34ML08G101BHA003 NAND flash memory?
The S34ML08G101BHA003 NAND flash memory has a maximum capacity of 8 gigabits.
2. What interface does the S34ML08G101BHA003 use for data transfer?
The S34ML08G101BHA003 uses a standard ONFI 2.3-compliant interface for data transfer.
3. Can the S34ML08G101BHA003 operate at industrial temperature ranges?
Yes, the S34ML08G101BHA003 is designed to operate reliably within industrial temperature ranges.
4. What is the typical power consumption of the S34ML08G101BHA003 during read and program operations?
The typical power consumption of the S34ML08G101BHA003 during read and program operations is low, making it suitable for power-sensitive applications.
5. Does the S34ML08G101BHA003 support hardware-based write protection?
Yes, the S34ML08G101BHA003 supports hardware-based write protection to prevent unauthorized data modification.
6. What are the typical erase and program times for the S34ML08G101BHA003?
The typical erase and program times for the S34ML08G101BHA003 are fast, enabling efficient data storage and retrieval.
7. Is the S34ML08G101BHA003 compatible with various error correction codes (ECC) schemes?
Yes, the S34ML08G101BHA003 is compatible with multiple ECC schemes to ensure data integrity and reliability.
8. Can the S34ML08G101BHA003 be used in automotive applications?
Yes, the S34ML08G101BHA003 is designed to meet the stringent requirements of automotive applications, including temperature and quality standards.
9. What is the data retention capability of the S34ML08G101BHA003?
The S34ML08G101BHA003 offers reliable long-term data retention, making it suitable for critical storage needs.
10. Does the S34ML08G101BHA003 incorporate advanced wear-leveling algorithms?
Yes, the S34ML08G101BHA003 incorporates advanced wear-leveling algorithms to extend its lifespan and ensure uniform usage across memory cells.
The S34ML08G101BHA003 NAND flash memory has a maximum capacity of 8 gigabits.
2. What interface does the S34ML08G101BHA003 use for data transfer?
The S34ML08G101BHA003 uses a standard ONFI 2.3-compliant interface for data transfer.
3. Can the S34ML08G101BHA003 operate at industrial temperature ranges?
Yes, the S34ML08G101BHA003 is designed to operate reliably within industrial temperature ranges.
4. What is the typical power consumption of the S34ML08G101BHA003 during read and program operations?
The typical power consumption of the S34ML08G101BHA003 during read and program operations is low, making it suitable for power-sensitive applications.
5. Does the S34ML08G101BHA003 support hardware-based write protection?
Yes, the S34ML08G101BHA003 supports hardware-based write protection to prevent unauthorized data modification.
6. What are the typical erase and program times for the S34ML08G101BHA003?
The typical erase and program times for the S34ML08G101BHA003 are fast, enabling efficient data storage and retrieval.
7. Is the S34ML08G101BHA003 compatible with various error correction codes (ECC) schemes?
Yes, the S34ML08G101BHA003 is compatible with multiple ECC schemes to ensure data integrity and reliability.
8. Can the S34ML08G101BHA003 be used in automotive applications?
Yes, the S34ML08G101BHA003 is designed to meet the stringent requirements of automotive applications, including temperature and quality standards.
9. What is the data retention capability of the S34ML08G101BHA003?
The S34ML08G101BHA003 offers reliable long-term data retention, making it suitable for critical storage needs.
10. Does the S34ML08G101BHA003 incorporate advanced wear-leveling algorithms?
Yes, the S34ML08G101BHA003 incorporates advanced wear-leveling algorithms to extend its lifespan and ensure uniform usage across memory cells.
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