S34ML01G200TFA000 Cypress Semiconductor Corp IC FLASH 1GBIT 25NS 48TSOP
Integraallülitused (IC-d)
Tootja number:
S34ML01G200TFA000
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 1GBIT 25NS 48TSOP
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
-
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
1Gb (128M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
48-TFSOP (0.724", 18.40mm Width)
Pakendamine :
Tray
Pinge – toide :
2.7 V ~ 3.6 V
seeria :
ML-2
Tarnija seadmepakett :
48-TSOP I
Tehnoloogia :
FLASH - NAND
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
25ns
Laos
21,200
Ühiku hind:
Võtke meiega ühendust Pakkumine
S34ML01G200TFA000 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele S34ML01G200TFA000 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc S34ML01G200TFA000. Parima hinna saamiseks saidil S34ML01G200TFA000 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
S34ML01G200TFA000 Iseärasused
S34ML01G200TFA000 is produced by Cypress Semiconductor Corp, belongs to Mälu.
S34ML01G200TFA000 Toote üksikasjad
:
S34ML01G200TFA000 – Mälu disainitud puhvervõimendid ja toodetud Cypress Semiconductor Corp.
S34ML01G200TFA000, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S34ML01G200TFA000 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S34ML01G200TFA000 (PDF), hind S34ML01G200TFA000, Pinout S34ML01G200TFA000, manuaal S34ML01G200TFA000 Ja S34ML01G200TFA000 asenduslahendus.
S34ML01G200TFA000, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S34ML01G200TFA000 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S34ML01G200TFA000 (PDF), hind S34ML01G200TFA000, Pinout S34ML01G200TFA000, manuaal S34ML01G200TFA000 Ja S34ML01G200TFA000 asenduslahendus.
S34ML01G200TFA000 FAQ
:
1. What is the maximum capacity of the S34ML01G200TFA000 NAND flash memory?
The S34ML01G200TFA000 NAND flash memory has a maximum capacity of 1 Gb (Gigabit).
2. What interface does the S34ML01G200TFA000 support?
The S34ML01G200TFA000 supports a standard ONFI 2.3-compliant NAND interface.
3. What are the operating voltage ranges for the S34ML01G200TFA000?
The operating voltage range for the S34ML01G200TFA000 is typically 2.7V to 3.6V for read and program operations, and 1.65V to 3.6V for erase operations.
4. Can the S34ML01G200TFA000 perform high-speed data transfers?
Yes, the S34ML01G200TFA000 is capable of high-speed data transfers with its synchronous interface and advanced NAND flash memory management features.
5. What is the typical power consumption of the S34ML01G200TFA000 during read and program operations?
The typical power consumption of the S34ML01G200TFA000 during read and program operations is low, making it suitable for power-sensitive applications.
6. Does the S34ML01G200TFA000 incorporate error correction capabilities?
Yes, the S34ML01G200TFA000 incorporates advanced error correction capabilities to ensure data integrity and reliability.
7. Is the S34ML01G200TFA000 designed for industrial temperature ranges?
Yes, the S34ML01G200TFA000 is designed to operate reliably within industrial temperature ranges, making it suitable for rugged environments.
8. Can the S34ML01G200TFA000 support multiple plane operations?
Yes, the S34ML01G200TFA000 supports multiple plane operations, enabling efficient parallelism for improved performance.
9. What are the typical endurance and retention characteristics of the S34ML01G200TFA000?
The S34ML01G200TFA000 offers high endurance and reliable data retention, meeting the demands of various storage applications.
10. Does the S34ML01G200TFA000 incorporate built-in wear-leveling algorithms?
Yes, the S34ML01G200TFA000 incorporates built-in wear-leveling algorithms to distribute write and erase cycles evenly across the memory cells, extending its lifespan.
I hope this information is helpful. Let me know if you need further assistance.
The S34ML01G200TFA000 NAND flash memory has a maximum capacity of 1 Gb (Gigabit).
2. What interface does the S34ML01G200TFA000 support?
The S34ML01G200TFA000 supports a standard ONFI 2.3-compliant NAND interface.
3. What are the operating voltage ranges for the S34ML01G200TFA000?
The operating voltage range for the S34ML01G200TFA000 is typically 2.7V to 3.6V for read and program operations, and 1.65V to 3.6V for erase operations.
4. Can the S34ML01G200TFA000 perform high-speed data transfers?
Yes, the S34ML01G200TFA000 is capable of high-speed data transfers with its synchronous interface and advanced NAND flash memory management features.
5. What is the typical power consumption of the S34ML01G200TFA000 during read and program operations?
The typical power consumption of the S34ML01G200TFA000 during read and program operations is low, making it suitable for power-sensitive applications.
6. Does the S34ML01G200TFA000 incorporate error correction capabilities?
Yes, the S34ML01G200TFA000 incorporates advanced error correction capabilities to ensure data integrity and reliability.
7. Is the S34ML01G200TFA000 designed for industrial temperature ranges?
Yes, the S34ML01G200TFA000 is designed to operate reliably within industrial temperature ranges, making it suitable for rugged environments.
8. Can the S34ML01G200TFA000 support multiple plane operations?
Yes, the S34ML01G200TFA000 supports multiple plane operations, enabling efficient parallelism for improved performance.
9. What are the typical endurance and retention characteristics of the S34ML01G200TFA000?
The S34ML01G200TFA000 offers high endurance and reliable data retention, meeting the demands of various storage applications.
10. Does the S34ML01G200TFA000 incorporate built-in wear-leveling algorithms?
Yes, the S34ML01G200TFA000 incorporates built-in wear-leveling algorithms to distribute write and erase cycles evenly across the memory cells, extending its lifespan.
I hope this information is helpful. Let me know if you need further assistance.
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