S29GL512S11TFIV23 Cypress Semiconductor Corp IC FLASH 512MBIT 110NS 56TSOP
Integraallülitused (IC-d)
Tootja number:
S29GL512S11TFIV23
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 512MBIT 110NS 56TSOP
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
S29GL512S11TFIV23 Andmetabelid(PDF)
Juurdepääsu aeg :
110ns
Kella sagedus :
-
Mälu liides :
Parallel
Mälu suurus :
512Mb (32M x 16)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
56-TFSOP (0.724", 18.40mm Width)
Pakendamine :
Tape & Reel (TR)
Pinge – toide :
1.65 V ~ 3.6 V
seeria :
GL-S
Tarnija seadmepakett :
56-TSOP
Tehnoloogia :
FLASH - NOR
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
60ns
Laos
15,778
Ühiku hind:
Võtke meiega ühendust Pakkumine
S29GL512S11TFIV23 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele S29GL512S11TFIV23 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc S29GL512S11TFIV23. Parima hinna saamiseks saidil S29GL512S11TFIV23 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
S29GL512S11TFIV23 Iseärasused
S29GL512S11TFIV23 is produced by Cypress Semiconductor Corp, belongs to Mälu.
S29GL512S11TFIV23 Toote üksikasjad
:
S29GL512S11TFIV23 – Mälu disainitud puhvervõimendid ja toodetud Cypress Semiconductor Corp.
S29GL512S11TFIV23, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S29GL512S11TFIV23 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S29GL512S11TFIV23 (PDF), hind S29GL512S11TFIV23, Pinout S29GL512S11TFIV23, manuaal S29GL512S11TFIV23 Ja S29GL512S11TFIV23 asenduslahendus.
S29GL512S11TFIV23, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S29GL512S11TFIV23 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S29GL512S11TFIV23 (PDF), hind S29GL512S11TFIV23, Pinout S29GL512S11TFIV23, manuaal S29GL512S11TFIV23 Ja S29GL512S11TFIV23 asenduslahendus.
S29GL512S11TFIV23 FAQ
:
1. What is the maximum operating frequency of the S29GL512S11TFIV23 flash memory?
The maximum operating frequency of the S29GL512S11TFIV23 flash memory is 66 MHz.
2. What is the typical power consumption of the S29GL512S11TFIV23 during read operations?
The typical power consumption of the S29GL512S11TFIV23 during read operations is 50 mA.
3. Can the S29GL512S11TFIV23 operate at industrial temperature ranges?
Yes, the S29GL512S11TFIV23 is designed to operate at industrial temperature ranges from -40°C to 85°C.
4. What are the voltage requirements for programming the S29GL512S11TFIV23?
The voltage requirements for programming the S29GL512S11TFIV23 range from 2.7V to 3.6V.
5. Does the S29GL512S11TFIV23 support simultaneous read and write operations?
Yes, the S29GL512S11TFIV23 supports simultaneous read and write operations.
6. What is the maximum data retention period of the S29GL512S11TFIV23?
The maximum data retention period of the S29GL512S11TFIV23 is 20 years.
7. Is the S29GL512S11TFIV23 compatible with common microcontrollers and processors?
Yes, the S29GL512S11TFIV23 is compatible with a wide range of microcontrollers and processors.
8. What is the erase time for the S29GL512S11TFIV23 using the chip erase method?
The erase time for the S29GL512S11TFIV23 using the chip erase method is typically 2 seconds.
9. Can the S29GL512S11TFIV23 withstand electrostatic discharge (ESD) events?
Yes, the S29GL512S11TFIV23 is designed to withstand electrostatic discharge (ESD) events up to 2000V.
10. What is the package type of the S29GL512S11TFIV23?
The S29GL512S11TFIV23 is available in a 56-ball Fortified BGA (FBGA) package.
The maximum operating frequency of the S29GL512S11TFIV23 flash memory is 66 MHz.
2. What is the typical power consumption of the S29GL512S11TFIV23 during read operations?
The typical power consumption of the S29GL512S11TFIV23 during read operations is 50 mA.
3. Can the S29GL512S11TFIV23 operate at industrial temperature ranges?
Yes, the S29GL512S11TFIV23 is designed to operate at industrial temperature ranges from -40°C to 85°C.
4. What are the voltage requirements for programming the S29GL512S11TFIV23?
The voltage requirements for programming the S29GL512S11TFIV23 range from 2.7V to 3.6V.
5. Does the S29GL512S11TFIV23 support simultaneous read and write operations?
Yes, the S29GL512S11TFIV23 supports simultaneous read and write operations.
6. What is the maximum data retention period of the S29GL512S11TFIV23?
The maximum data retention period of the S29GL512S11TFIV23 is 20 years.
7. Is the S29GL512S11TFIV23 compatible with common microcontrollers and processors?
Yes, the S29GL512S11TFIV23 is compatible with a wide range of microcontrollers and processors.
8. What is the erase time for the S29GL512S11TFIV23 using the chip erase method?
The erase time for the S29GL512S11TFIV23 using the chip erase method is typically 2 seconds.
9. Can the S29GL512S11TFIV23 withstand electrostatic discharge (ESD) events?
Yes, the S29GL512S11TFIV23 is designed to withstand electrostatic discharge (ESD) events up to 2000V.
10. What is the package type of the S29GL512S11TFIV23?
The S29GL512S11TFIV23 is available in a 56-ball Fortified BGA (FBGA) package.
S29GL512S11TFIV23 Seotud märksõnad
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