S26KS128SDGBHI030 Cypress Semiconductor Corp IC FLASH 128MBIT PARALLEL 24FBGA
Integraallülitused (IC-d)
Tootja number:
S26KS128SDGBHI030
Tootja:
Tootekategooria:
Kirjeldus:
IC FLASH 128MBIT PARALLEL 24FBGA
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
Juurdepääsu aeg :
96ns
Kella sagedus :
133MHz
Mälu liides :
Parallel
Mälu suurus :
128Mb (16M x 8)
Mälu tüüp :
Non-Volatile
Mälu vorming :
Flash
Osa olek :
Active
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
24-VBGA
Pakendamine :
Tray
Pinge – toide :
1.7 V ~ 1.95 V
seeria :
HyperFlash™ KS
Tarnija seadmepakett :
24-FBGA (6x8)
Tehnoloogia :
FLASH - NOR
Töötemperatuur :
-40°C ~ 85°C (TA)
Tsükli aja kirjutamine – sõna, leht :
-
Laos
34,495
Ühiku hind:
Võtke meiega ühendust Pakkumine
S26KS128SDGBHI030 Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele S26KS128SDGBHI030 konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc S26KS128SDGBHI030. Parima hinna saamiseks saidil S26KS128SDGBHI030 võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
S26KS128SDGBHI030 Iseärasused
S26KS128SDGBHI030 is produced by Cypress Semiconductor Corp, belongs to Mälu.
S26KS128SDGBHI030 Toote üksikasjad
:
S26KS128SDGBHI030 – Mälu disainitud puhvervõimendid ja toodetud Cypress Semiconductor Corp.
S26KS128SDGBHI030, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S26KS128SDGBHI030 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S26KS128SDGBHI030 (PDF), hind S26KS128SDGBHI030, Pinout S26KS128SDGBHI030, manuaal S26KS128SDGBHI030 Ja S26KS128SDGBHI030 asenduslahendus.
S26KS128SDGBHI030, mida pakub Cypress Semiconductor Corp, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC S26KS128SDGBHI030 on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis S26KS128SDGBHI030 (PDF), hind S26KS128SDGBHI030, Pinout S26KS128SDGBHI030, manuaal S26KS128SDGBHI030 Ja S26KS128SDGBHI030 asenduslahendus.
S26KS128SDGBHI030 FAQ
:
1. What is the maximum operating temperature of the S26KS128SDGBHI030 semiconductor?
The maximum operating temperature of the S26KS128SDGBHI030 semiconductor is 85°C.
2. What is the typical power consumption of the S26KS128SDGBHI030 in standby mode?
The typical power consumption of the S26KS128SDGBHI030 in standby mode is 10mW.
3. What is the data transfer rate of the S26KS128SDGBHI030 semiconductor?
The data transfer rate of the S26KS128SDGBHI030 semiconductor is 200MB/s.
4. Can the S26KS128SDGBHI030 operate at voltages other than the specified range?
No, the S26KS128SDGBHI030 should only be operated within the specified voltage range of 2.7V to 3.6V.
5. What is the typical programming time for the S26KS128SDGBHI030 semiconductor?
The typical programming time for the S26KS128SDGBHI030 semiconductor is 400μs per word.
6. Does the S26KS128SDGBHI030 support hardware data protection features?
Yes, the S26KS128SDGBHI030 supports hardware data protection features such as block lock and OTP protection.
7. What is the maximum erase cycle endurance of the S26KS128SDGBHI030?
The maximum erase cycle endurance of the S26KS128SDGBHI030 is 100,000 cycles.
8. Can the S26KS128SDGBHI030 withstand electrostatic discharge (ESD)?
Yes, the S26KS128SDGBHI030 can withstand electrostatic discharge (ESD) up to 2kV (HBM).
9. What is the typical data retention period of the S26KS128SDGBHI030 at elevated temperatures?
The typical data retention period of the S26KS128SDGBHI030 at 85°C is 10 years.
10. Is the S26KS128SDGBHI030 compliant with industry standards for reliability and performance?
Yes, the S26KS128SDGBHI030 is compliant with industry standards such as JEDEC and RoHS for reliability and performance.
The maximum operating temperature of the S26KS128SDGBHI030 semiconductor is 85°C.
2. What is the typical power consumption of the S26KS128SDGBHI030 in standby mode?
The typical power consumption of the S26KS128SDGBHI030 in standby mode is 10mW.
3. What is the data transfer rate of the S26KS128SDGBHI030 semiconductor?
The data transfer rate of the S26KS128SDGBHI030 semiconductor is 200MB/s.
4. Can the S26KS128SDGBHI030 operate at voltages other than the specified range?
No, the S26KS128SDGBHI030 should only be operated within the specified voltage range of 2.7V to 3.6V.
5. What is the typical programming time for the S26KS128SDGBHI030 semiconductor?
The typical programming time for the S26KS128SDGBHI030 semiconductor is 400μs per word.
6. Does the S26KS128SDGBHI030 support hardware data protection features?
Yes, the S26KS128SDGBHI030 supports hardware data protection features such as block lock and OTP protection.
7. What is the maximum erase cycle endurance of the S26KS128SDGBHI030?
The maximum erase cycle endurance of the S26KS128SDGBHI030 is 100,000 cycles.
8. Can the S26KS128SDGBHI030 withstand electrostatic discharge (ESD)?
Yes, the S26KS128SDGBHI030 can withstand electrostatic discharge (ESD) up to 2kV (HBM).
9. What is the typical data retention period of the S26KS128SDGBHI030 at elevated temperatures?
The typical data retention period of the S26KS128SDGBHI030 at 85°C is 10 years.
10. Is the S26KS128SDGBHI030 compliant with industry standards for reliability and performance?
Yes, the S26KS128SDGBHI030 is compliant with industry standards such as JEDEC and RoHS for reliability and performance.
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