CGHV1F006S Cree/Wolfspeed RF MOSFET HEMT 40V 12DFN
Diskreetsed pooljuhid
Tootja number:
CGHV1F006S
Tootja:
Tootekategooria:
Kirjeldus:
RF MOSFET HEMT 40V 12DFN
RoHs olek:
Pliivaba / RoHS-iga ühilduv Andmetabelid:
CGHV1F006S Andmetabelid(PDF)
Kasu :
16dB
Müra joonis :
-
Osa olek :
Active
Pakend/ümbris :
12-VFDFN Exposed Pad
Pakendamine :
Tape & Reel (TR)
Pinge – nimiväärtus :
100V
Pinge – test :
40V
Praegune reiting :
950mA
Praegune – Test :
60mA
Sagedus :
6GHz
seeria :
GaN
Tarnija seadmepakett :
12-DFN (4x3)
Transistori tüüp :
HEMT
Võimsus :
8W
Laos
57,768
Ühiku hind:
Võtke meiega ühendust Pakkumine
CGHV1F006S Konkurentsivõimelised hinnad
ChipIcil on ainulaadne tarneallikas. Pakume oma klientidele CGHV1F006S konkurentsivõimelise hinnaga. Saate nautida meie parimat teenust, ostes ChipIc CGHV1F006S. Parima hinna saamiseks saidil CGHV1F006S võtke meiega ühendust.
Hinnapakkumise saamiseks klõpsake
CGHV1F006S Iseärasused
CGHV1F006S is produced by Cree/Wolfspeed, belongs to Transistorid - väljatransistorid, MOSFETid - RF.
CGHV1F006S Toote üksikasjad
:
CGHV1F006S – Transistorid - väljatransistorid, MOSFETid - RF disainitud puhvervõimendid ja toodetud Cree/Wolfspeed.
CGHV1F006S, mida pakub Cree/Wolfspeed, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC CGHV1F006S on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis CGHV1F006S (PDF), hind CGHV1F006S, Pinout CGHV1F006S, manuaal CGHV1F006S Ja CGHV1F006S asenduslahendus.
CGHV1F006S, mida pakub Cree/Wolfspeed, saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC CGHV1F006S on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis CGHV1F006S (PDF), hind CGHV1F006S, Pinout CGHV1F006S, manuaal CGHV1F006S Ja CGHV1F006S asenduslahendus.
CGHV1F006S FAQ
:
1. What is the maximum drain-source voltage rating for the CGHV1F006S?
The maximum drain-source voltage rating for the CGHV1F006S is 650 volts.
2. What is the typical input capacitance of the CGHV1F006S at a specified voltage and frequency?
The typical input capacitance of the CGHV1F006S is 440 pF at a voltage of 25 V and a frequency of 1 MHz.
3. Can the CGHV1F006S be used in high-frequency applications?
Yes, the CGHV1F006S is suitable for high-frequency applications due to its low input and output capacitance.
4. What is the maximum continuous drain current for the CGHV1F006S?
The maximum continuous drain current for the CGHV1F006S is 6 A.
5. Does the CGHV1F006S require an external matching network for optimal performance?
Yes, the CGHV1F006S requires an external matching network for optimal performance in RF applications.
6. What is the typical on-state resistance of the CGHV1F006S?
The typical on-state resistance of the CGHV1F006S is 0.35 ohms.
7. Is the CGHV1F006S suitable for use in Class AB amplifier designs?
Yes, the CGHV1F006S is suitable for use in Class AB amplifier designs due to its high power handling capability.
8. What is the recommended operating temperature range for the CGHV1F006S?
The recommended operating temperature range for the CGHV1F006S is -55°C to 150°C.
9. Can the CGHV1F006S be used in linear amplifier applications?
Yes, the CGHV1F006S can be used in linear amplifier applications due to its low distortion characteristics.
10. What is the typical gate charge of the CGHV1F006S at a specified voltage and current?
The typical gate charge of the CGHV1F006S is 20 nC at a voltage of 10 V and a drain current of 3 A.
The maximum drain-source voltage rating for the CGHV1F006S is 650 volts.
2. What is the typical input capacitance of the CGHV1F006S at a specified voltage and frequency?
The typical input capacitance of the CGHV1F006S is 440 pF at a voltage of 25 V and a frequency of 1 MHz.
3. Can the CGHV1F006S be used in high-frequency applications?
Yes, the CGHV1F006S is suitable for high-frequency applications due to its low input and output capacitance.
4. What is the maximum continuous drain current for the CGHV1F006S?
The maximum continuous drain current for the CGHV1F006S is 6 A.
5. Does the CGHV1F006S require an external matching network for optimal performance?
Yes, the CGHV1F006S requires an external matching network for optimal performance in RF applications.
6. What is the typical on-state resistance of the CGHV1F006S?
The typical on-state resistance of the CGHV1F006S is 0.35 ohms.
7. Is the CGHV1F006S suitable for use in Class AB amplifier designs?
Yes, the CGHV1F006S is suitable for use in Class AB amplifier designs due to its high power handling capability.
8. What is the recommended operating temperature range for the CGHV1F006S?
The recommended operating temperature range for the CGHV1F006S is -55°C to 150°C.
9. Can the CGHV1F006S be used in linear amplifier applications?
Yes, the CGHV1F006S can be used in linear amplifier applications due to its low distortion characteristics.
10. What is the typical gate charge of the CGHV1F006S at a specified voltage and current?
The typical gate charge of the CGHV1F006S is 20 nC at a voltage of 10 V and a drain current of 3 A.
CGHV1F006S Seotud märksõnad
:
CGHV1F006S Hind
CGHV1F006S Maalimine
CGHV1F006S Tihvtide pinge
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