AS4C512M8D3LA-12BIN Alliance Memory, Inc. IC SDRAM 4GBIT 800MHZ 78BGA
Integraallülitused (IC-d)
Tootja number:
AS4C512M8D3LA-12BIN
Tootja:
Tootekategooria:
Kirjeldus:
IC SDRAM 4GBIT 800MHZ 78BGA
RoHs olek:
Andmetabelid:
Juurdepääsu aeg :
20ns
Kella sagedus :
800MHz
Mälu liides :
Parallel
Mälu suurus :
4Gb (512M x 8)
Mälu tüüp :
Volatile
Mälu vorming :
DRAM
Osa olek :
Obsolete
Paigaldustüüp :
Surface Mount
Pakend/ümbris :
78-VFBGA
Pakendamine :
Tray
Pinge – toide :
1.283 V ~ 1.45 V
seeria :
-
Tarnija seadmepakett :
78-FBGA (10.5x9)
Tehnoloogia :
SDRAM - DDR3L
Töötemperatuur :
-40°C ~ 95°C (TC)
Tsükli aja kirjutamine – sõna, leht :
15ns
Laos
42,447
Ühiku hind:
Võtke meiega ühendust Pakkumine
AS4C512M8D3LA-12BIN Konkurentsivõimelised hinnad
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AS4C512M8D3LA-12BIN Iseärasused
AS4C512M8D3LA-12BIN is produced by Alliance Memory, Inc., belongs to Mälu.
AS4C512M8D3LA-12BIN Toote üksikasjad
:
AS4C512M8D3LA-12BIN – Mälu disainitud puhvervõimendid ja toodetud Alliance Memory, Inc..
AS4C512M8D3LA-12BIN, mida pakub Alliance Memory, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC AS4C512M8D3LA-12BIN on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis AS4C512M8D3LA-12BIN (PDF), hind AS4C512M8D3LA-12BIN, Pinout AS4C512M8D3LA-12BIN, manuaal AS4C512M8D3LA-12BIN Ja AS4C512M8D3LA-12BIN asenduslahendus.
AS4C512M8D3LA-12BIN, mida pakub Alliance Memory, Inc., saab osta CHIPMLCC-st.
Siit leiate erinevaid juhtivate tootjate elektroonilisi osi rahu.
CHIPMLCC AS4C512M8D3LA-12BIN on range kvaliteedikontrolliga ja nõuetele vastav kõike nõuetele.
CHIPMLCC-s näidatud fondi staatus on ainult viitamiseks.
Kui te ei leia otsitavat osa, võtke meiega ühendust lisateavet, näiteks varude arvu andmetabelis AS4C512M8D3LA-12BIN (PDF), hind AS4C512M8D3LA-12BIN, Pinout AS4C512M8D3LA-12BIN, manuaal AS4C512M8D3LA-12BIN Ja AS4C512M8D3LA-12BIN asenduslahendus.
AS4C512M8D3LA-12BIN FAQ
:
1. What is the maximum operating frequency of the AS4C512M8D3LA-12BIN?
The maximum operating frequency of the AS4C512M8D3LA-12BIN is 133 MHz.
2. What is the power supply voltage range for this semiconductor?
The power supply voltage range for the AS4C512M8D3LA-12BIN is 2.7V to 3.6V.
3. Can you provide the typical standby current for this device?
The typical standby current for the AS4C512M8D3LA-12BIN is 1μA.
4. What are the operating temperature ranges for this semiconductor?
The operating temperature range for the AS4C512M8D3LA-12BIN is -40°C to +85°C.
5. Does this semiconductor support burst read and write operations?
Yes, the AS4C512M8D3LA-12BIN supports burst read and write operations.
6. What is the data retention capability of this device?
The data retention capability of the AS4C512M8D3LA-12BIN is 10 years.
7. Can you specify the package type for this semiconductor?
The AS4C512M8D3LA-12BIN is available in a 60-ball FBGA package.
8. Is there a recommended layout design for optimal performance?
Yes, a recommended layout design is provided in the datasheet for optimal performance.
9. What is the typical access time for this semiconductor?
The typical access time for the AS4C512M8D3LA-12BIN is 5.4 ns.
10. Are there any special handling considerations for this device during assembly?
Special handling considerations are outlined in the assembly and reliability section of the datasheet.
The maximum operating frequency of the AS4C512M8D3LA-12BIN is 133 MHz.
2. What is the power supply voltage range for this semiconductor?
The power supply voltage range for the AS4C512M8D3LA-12BIN is 2.7V to 3.6V.
3. Can you provide the typical standby current for this device?
The typical standby current for the AS4C512M8D3LA-12BIN is 1μA.
4. What are the operating temperature ranges for this semiconductor?
The operating temperature range for the AS4C512M8D3LA-12BIN is -40°C to +85°C.
5. Does this semiconductor support burst read and write operations?
Yes, the AS4C512M8D3LA-12BIN supports burst read and write operations.
6. What is the data retention capability of this device?
The data retention capability of the AS4C512M8D3LA-12BIN is 10 years.
7. Can you specify the package type for this semiconductor?
The AS4C512M8D3LA-12BIN is available in a 60-ball FBGA package.
8. Is there a recommended layout design for optimal performance?
Yes, a recommended layout design is provided in the datasheet for optimal performance.
9. What is the typical access time for this semiconductor?
The typical access time for the AS4C512M8D3LA-12BIN is 5.4 ns.
10. Are there any special handling considerations for this device during assembly?
Special handling considerations are outlined in the assembly and reliability section of the datasheet.
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